CHENMKO ENTERPRISE CO.,LTD CHT55N1PT SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. FBPT-923 FEATURE * Small surface mounting type. (FBPT-923) * Low current (Max.=500mA). * Suitable for high packing density. 0.5±0.05 1.0±0.05 * Low voltage (Max.=60V) . * High saturation current capability. 0.37(REF.) 1.0±0.05 0.25(REF.) CONSTRUCTION 0.05±0.04 * PNP General Purpose Transistor 0.68±0.05 0.42±0.05 C (3) CIRCUIT 0.3±0.05 (1) B 0.26±0.05 E(2) FBPT-923 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -60 V VCEO collector-emitter voltage open base − -60 V VEBO emitter-base voltage open collector − -4 V IC collector current DC − -500 mA ICM peak collector current − -500 mA IBM peak base current − -100 mA Ptot total power dissipation − 100 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 2006-07 RATING CHARACTERISTIC CURVES ( CHT55N1PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = -60 V − -0.1 uA IEBO emitter cut-off current IC = 0; VEB = 60 V − -0.1 uA hFE DC current gain VCE = -1.0 V; note 1 IC = -10 mA 100 − IC = -100 mA 100 − VCEsat collector-emitter saturation voltage IC = -100 mA; IB =-10 mA − -0.25 V VBEsat base-emitter saturation voltage IC = -100 mA; VCE = -1.0 V − -1.2 V Ccb collector-base capacitance IE = ie = 0; VCB =-20V ; f = 1 MHz − 3 pF fT transition frequency IC = 100 mA; VCE =-1.0 V ; f = 100 MHz 50 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.