CHENMKO ENTERPRISE CO.,LTD CHT5946PT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 50Volts CURRENT 5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-59/SOT-346 FEATURE * Surface mount package. (SC-59/SOT-346) * Suitable for high packing density. (2) CONSTRUCTION 0.95 (3) 1.7~2.1 *NPN Silicon Transistor 2.7~3.1 0.95 (1) 0.3~0.51 1.2~1.9 0.89~1.3 0.085~0.2 0~0.1 0.3~0.6 C (3) CIRCUIT 2.1~2.95 (1) B E(2) SC-59/SOT-346 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 5 A − 300 total power dissipation Tamb ≤ 25 °C; note 1 mW Ptot Tamb ≤ 25 °C; note 2 − 625 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 40 150 °C Tamb operating ambient temperature −55 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2. Maximum power dissipation is calcuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm V 2005-11 RATING CHARACTERISTIC CURVES ( CHT5946PT ) THERMAL CHARACTERISTICS VALUE UNIT Rth j-a SYMBOL thermal resistance from junction to ambien PARAMETER note 2 CONDITIONS 200 ° C/W Rth j-c thermal resistance from junction to case note 2 115 ° C/W CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 80V,IE=0 − 0.5 uA ICEO collector cut-off current VCE=40V,IB=0 − 0.5 uA IEBO emitter cut-off current VEB=6V ,IC=0 − 0.5 uA hFE DC current gain IC = 10 mA; VCE = 2V IC = 500 mA; VCE =2V 200 600 200 560 VCE(sat) collector-emitter saturation voltage IC = 1 0 00 mA; IB = 50 m A IC = 2 0 00 mA; IB = 100 m A − − 0.14 0.24 V V VBE(sat) base-emitter saturation voltage IC = 2 0 00 mA; IB = 50 m A − 1.0 V Cob collector output capacitance IE = 0 ; VCB = 1 0 V; f = 1 M H Z 15(typ) − pF fT transition frequency IC = -500 mA; VCE = 1 0 V; 400(typ) − MHz Note : Pulse test: tp ≤ 300uSec; δ ≤ 0.02. RATING CHARACTERISTIC CURVES ( CHT5946PT ) DC Current Gain vs Collector Current Collector Emitter Saturation Voltage vs cOllector Current 10000 VCE(sat)䇭䋺䇭COLLECTOR EMITTER SATURATION VOLTAGE ( mV ) hFE䇭䋺䇭DC CURRENT GAIN 1000 100 10 0.01 0.1 1 IC/IB = 20 1000 100 10 0.01 10 0.1 1 10 IC䇭䋺䇭COLLECTOR CURRENT ( A ) IC䇭䋺䇭COLLECTOR CURRENT ( A ) Transistion Frequencyvs Emitter Current Base Emitter Saturation Voltage vs cOllector Current 1000 fT䇭䋺䇭TRANSITION FREQUENCY ( MHz ) VBE(sat)䇭䋺䇭BASE EMITTER SATURATION VOLTAGE ( mV ) 10000 IC/IB = 50 1000 100 0.01 0.1 1 VCE = 10V 100 10 0.01 10 0.1 Output Capactance vs Reverse Biae Voltage Power Dissipation vs Operating Ambient Temperature 800 1000 f = 1MHz 700 Power Dissipation (mW) Cob䇭䋺䇭OUTPUT CAPACITANCE ( pF ) 1 IE䇭䋺䇭EMITTER CURRENT ( -A ) IC䇭䋺䇭COLLECTOR CURRENT ( A ) 100 10 600 500 400 300 200 100 0 1 0 0.1 1 10 VCB䇭䋺䇭REVERSE BIAS VOLTAGE ( V ) 100 20 40 60 80 100 120 Operating Ambient Temperature ( °C) 140 160