CHENMKO CHT856BWPT

CHENMKO ENTERPRISE CO.,LTD
CHT856BWPT
SURFACE MOUNT
PNP Muti-Chip General Purpose Amplifier
VOLTAGE 65 Volts
CURRENT 0.1 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
SC-70/SOT-323
* Surface mount package. (SC-70/SOT-323)
* High current gain.
* Suitable for high packing density.
(2)
* Low colloector-emitter saturation.
* High saturation current capability.
(3)
MARKING
(1)
1.3±0.1
0.65
2.0±0.2
0.65
0.3±0.1
1.25±0.1
* HFE(Q):RQ
* HFE(R):RR
* HFE(S):RS
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
2.0~2.45
3
CIRCUIT
1
2
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
UNIT
V CBO
collector-base voltage
open emitter
-80
V
V CEO
collector-emitter voltage
open base
-65
V
VEBO
emitter-base voltage
open collector
-5
V
IC
collector current (DC)
-0.1
A
PC
Collector power dissipation
200
mW
Tstg
Tj
storage temperature
junction temperature
Note
1. Transistor mounted on an FR4 printed-circuit board.
−55~+150
°C
+150
°C
2004-10
RATING CHARACTERISTIC ( CHT856BWPT)
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
BVCBO
BVCEO
BVEBO
hFE
VCEsat
PARAMETER
CONDITIONS
IE = 0; VCB = -30 V
collector cut-off current
IC = 0; VCB = -30 V; TA = 150 O C
collector-base breakdown voltage
IC =-10uA
collector-emitter breakdown voltage IC =-10mA
IE =-1uA
emitter-base breakdown voltage
VCE /I C =-5V/-2 mA
current
transfer
ratio
DC
I
C = -10 mA ; IB = -0.5 mA
collector-emitter saturation
IC = -100 mA ; I B = -5 mA
voltage
MIN.
Typ.
−
−
-80
-65
-5
-125
−
−
−
−
−
−
−
−
−
−
UNIT
MAX.
-15 nA
-5
uA
V
−
V
−
−
V
-800
-300 mV
VBEsat
base-emitter satur ation voltage
IC = -10mA;IB = -0.5 mA
−
-700
−
mV
mV
Cib
emitter input capacitance
−
8
−
pF
−
3
200
−
pF
−
−
MHz
Cob
collector output capacitance
IC = 0; VCB =- 0.5V; f = 1 MH z
IE = 0; VCB = -10V ; f = 1 MH z
fT
transition frequency
IE = -20 mA; VCE = 5 V ; f = 100 MHz
-650
Note
1. Pulse test: t p ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800
Typical Pulsed Current Gain
vs Collector Current
500
V CE = 5V
400
°
125 C
300
25 C
°
200
100
0
0.01
- 40 C
°
0 .1
1
10
100
I C - COLLECTOR CURRENT (mA)
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
RATING CHARACTERISTIC CURVES ( CHT856BWPT)
Collector-Emitter Saturation
Voltage vs Collector Current
0. 3
β = 10
0.25
0. 2
0.15
°
25 C
0. 1
0.05
°
125 C
°
- 40 C
0
0.1
1
10
10 0
I C - COLLECTOR CURRE NT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
°
- 40 C
0.8
°
25 C
0.6
°
125 C
0.4
0.2
0
0.1
1
10
10 0
300
I C - COLLECTOR CURRE NT (mA)
V BEON - BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)
RATING CHARACTERISTIC CURVES ( CHT856BWPT)
Base Emitter ON Voltage vs
Collector Current
1
°
0.8
- 40 C
°
125 C
0.4
V CE = 5V
0.2
0
0.1
1
1
0. 1
0.01
75
10 0
125
°
V CE - COLLECTOR-EMITTER VOLTAGE (V)
T A - AMBIE NT TEMP ERATURE ( C)
BVCER - BREAKDOWN VOLTAGE (V)
V CB = 50V
10
50
90
85
80
75
70
0.1
100 uA
300 mA
50 mA
1
10
100
1000
RESISTANCE (k Ω)
100
Ta = 25 °C
3
1
Input and Output Capacitance
vs Reverse Voltage
4
Ic =
200
95
Collector Saturation Region
2
100
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
f = 1.0 MHz
CAPACITANCE (pF)
I CBO - COLLE CTOR CURRENT (nA)
0
25
10
I C - COLLECTOR CURRE NT (mA)
Collector-Cutoff Current
vs Ambient Temperature
10
°
25 C
0.6
10
Cib
Cob
0
100
300
700
I B - BASE CURRENT (uA)
2000 4000
0.1
1
10
V CE - COLLECTOR VOLTAGE (V)
100
f T - GAIN BANDWIDTH PRODUCT (MHz)
RATING CHARACTERISTIC CURVES ( CHT856BWPT)
Switching Times vs
Collector Current
Gain Bandwidth Product
vs Collector Current
40
300
Vce = 5V
270
ts
240
30
TIME (nS)
210
20
180
IB1 = IB2 = Ic / 10
V cc = 10 V
150
120
90
10
tf
tr
60
30
td
0
0
1
10
20
50
I C - COLLECTOR CURRENT (mA)
100 150
10
20
30
50
100
I C - COLLECTOR CURRENT (mA)
200
300