CHENMKO CHUMD4PT

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Digital Silicon Transistor
DTr1:VOLTAGE 50 Volts
DTr2:VOLTAGE 50 Volts
CHUMD4PT
CURRENT 50 mAmpere
CURRENT 70 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* High current gain.
* Suitable for high packing density.
*
*
*
*
SC-88/SOT-363
Low colloector-emitter saturation.
High saturation current capability.
Both the CHDTA114Y & CHDTC144E in one package.
Built in bias resistor(R1=10kΩ, Typ. )
(1)
(6)
0.65
1.2~1.4
2.0~2.2
0.65
(4)
0.15~0.35 (3)
1.15~1.35
0.8~1.1
0.08~0.15
0~0.1
0.1 Min.
CIRCUIT
3
1
R1
DTr2
R2
2.15~2.45
R2
DTr1
R1
4
6
SC-88/SOT-363
Dimensions in millimeters
CHDTC114E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
Supply voltage
−
50
V
VIN
Input voltage
-10
+40
V
−
50
−
100
−
150
mW
+150
O
C
C
C/W
IO
DC Output current
IC(Max.)
Tamb ≤ 25 OC, Note 1
mA
PTOT
Total power dissipation
TSTG
Storage temperature
−55
TJ
Junction temperature
−
150
O
RθJ-S
Thermal resistance
−
140
O
junction - soldering point
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-04
CHDTA114Y LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
Supply voltage
−
-50
V
VIN
Input voltage
-40
+6
V
−
-70
−
-100
−
150
mW
O
C
IO
DC Output current
IC(Max.)
Tamb ≤ 25 OC, Note 1
mA
PTOT
Total power dissipation
TSTG
Storage temperature
−55
+150
TJ
Junction temperature
−
150
O
C
Thermal resistance
−
140
O
C/W
RθJ-S
junction - soldering point
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHDTC114E CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VIoff)
Input off voltage
IO=100uA; VCC=5.0V
0.5
−
−
V
VI(on)
Input on voltage
IO=10mA; VO=0.3V
−
−
3.0
V
VO(on)
Output voltage
IO=10mA; II=0.5mA
−
0.1
0.3
V
−
II
Input current
VI=5V
−
0.88
mA
IC(off)
Output current
VI=0V; VCC=50V
−
−
0.5
uA
hFE
DC current gain
IO=5mA; VO=5.0V
30
−
−
R1
Input resistor
7.0
10.0
13.0
KΩ
R2/R1
fT
Resistor ratio
Transition frequency
0.8
−
1.0
250
1.2
−
MHz
IC=5mA, VCE=10.0V
f=100MHz
=
Note
1.Pulse test: tp≤300uS; δ≤0.02.
CHDTA114Y CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VIoff)
Input off voltage
IO=-100uA; VCC=-5.0V
-0.3
−
−
V
VI(on)
Input on voltage
IO=-1.0mA; VO=-0.3V
−
−
-1.4
V
VO(on)
Output voltage
IO=-5mA; II=-0.25mA
−
-0.1
-0.3
V
II
Input current
VI=-5.0V
−
−
-0.88
mA
IC(off)
Output current
VI=0V; VCC=-50V
−
−
-0.5
uA
hFE
DC current gain
IO=-5.0mA; VO=-5.0V
68
−
−
R1
Input resistor
7.0
10.0
13.0
KΩ
R2/R1
fT
Resistor ratio
Transition frequency
3.7
−
4.7
250
5.7
−
MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
IC=-5mA, VCE=-10.0V
f=100MHz
=
RATING CHARACTERISTIC CURVES ( CHUMD4PT)
CHDTC114E Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
100
Fig.2 Output current vs. input voltage
(OFF characteristics)
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
Ta =- 40OC
O
25
= C
100OC
5
2
1
500m
200m
100m
100
200
500 1m
2m
2m
1m
500
VCC=5V
Ta=100OC
25OC
-40 OC
200
100
50
20
10
5
2
1
5m 10m 20m 50m 100m
0
0.5
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
1k
2.5
3.0
lO/lI=20
500m
Ta=100 C
25OC
-40OC
100
50
20
10
5
2
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
2.0
1
VO =5V
O
1
100 200
1.5
Fig.4 Output voltage vs. output
current
500
200
1.0
INPUT VOLTAGE : VI(off) (V)
Ta=100OC
25OC
-40 OC
200m
100m
50m
20m
10m
5m
2m
500 1m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
1m
100
200
500 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
RATING CHARACTERISTIC CURVES ( CHUMD4PT)
CHDTA114Y Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
-100
Fig.2 Output current vs. input voltage
(OFF characteristics)
-10m
-5m
VO=- 0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
-50
-20
-10
-5
-2
Ta =- 40OC
O
25
= C
100OC
-1
-500m
-200m
-100m
-100 -200 -500 -1m -2m
-2m
-1m
-500
Ta=100OC
25OC
-40 OC
-200
-100
-50
-20
-10
-5
-2
-1
-0
-5m -10m -20m -50m -100m
VCC =- 5V
-0.5
Fig.3 DC current gain vs. output
current
1k
-1
VO =- 5V
-2.5
-3.0
lO/lI=20
-500m
Ta=100OC
25OC
-40OC
100
50
20
10
5
2
1
-100 -200
-2.0
Fig.4 Output voltage vs. output
current
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
200
-1.5
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
500
-1.0
-200m
-100m
Ta=100OC
25OC
-40 OC
-50m
-20m
-10m
-5m
-2m
-500 -1m
-2m
-5m -10m -20m -50m -100m
OUTPUT CURRENT : IO (A)
-1m
-100 -200
-500 -1m -2m
-5m -10m -20m -50m -100m
OUTPUT CURRENT : IO (A)