Si5511DC Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.055 at VGS = 4.5 V 4a,g 0.090 at VGS = 2.5 V 4a,g • TrenchFET® Power MOSFETs Qg (Typ) APPLICATIONS 4.2 nC a 0.150 at VGS = - 4.5 V - 3.6 0.256 at VGS = - 2.5 V - 2.7a RoHS COMPLIANT • Buck-Boost - DSC - Portable Devices 2.85 nC 1206-8 Chip-FET ® D1 1 S2 S1 D1 G1 D1 D2 G2 Marking Code S2 G2 EE XXX D2 G1 Lot Traceability and Date Code Part # Code S1 D2 N-Channel MOSFET P-Channel MOSFET Bottom View Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C 4a, g 4a, g 4a, g 3.9a 15 2.6 - 3.6a - 2.8a - 2.3b, c - 1.8b, c - 10 - 2.6 1.7b, c 3.1 2.0 - 1.7b, c 2.6 1.7 2.1b, c 1.33b, c 1.3b, c 0.84b, c ID IS PD TJ, Tstg Operating Junction and Storage Temperature Range P-Channel - 30 ± 12 IDM Pulsed Drain Current Source Drain Current Diode Current N-Channel 30 - 55 to 150 Soldering Recommendations (Peak Temperature)d, e Unit V A W °C 260 THERMAL RESISTANCE RATINGS N-Channel Parameter Junction-to-Ambientb, f t≤5s Symbol RthJA RthJF P-Channel Typ Max Typ Max 50 30 60 40 77 33 95 40 Unit Maximum °C/W Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 s d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel. g. Package limited. Document Number: 73787 S-72204-Rev. B, 22-Oct-07 www.vishay.com 1 Si5511DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typa Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA N-Ch 30 VGS = 0 V, ID = - 250 µA P-Ch - 30 ID = 250 µA N-Ch 24.2 ID = - 250 µA P-Ch - 23.1 ID = 250 µA N-Ch 3.6 2.3 On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS ID(on) rDS(on) gfs mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.7 2 VDS = VGS, ID = - 250 µA P-Ch - 0.7 -2 VDS = 0 V, VGS = ± 12 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current V N-Ch 100 P-Ch - 100 N-Ch 1 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS ≤ 5 V, VGS = 4.5 V N-Ch 15 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 10 VGS = 4.5 V, ID = 4.8 A N-Ch 0.045 0.055 VGS = - 4.5 V, ID = - 2.3 A P-Ch 0.125 0.150 VGS = 2.5 V, ID = 3.8 A N-Ch 0.075 0.090 VGS = - 2.5 V, ID = 1.8 A P-Ch 0.213 0.256 VDS = 15 V, ID = 4.8 A N-Ch 10.8 VDS = - 15 V, ID = - 2.3 A P-Ch 6.56 V nA µA A Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 5 V, ID = 4.8 A Total Gate Charge Gate-Source Charge Qg VDS = - 15 V, VGS = - 5 V, ID = - 3.2 A 435 P-Ch 260 N-Ch 65 P-Ch 55 N-Ch 30 42 N-Ch 4.7 7.1 6.2 P-Ch 4.1 N-Ch 4.2 6.3 4.6 P-Ch 3.8 N-Ch 1.1 P-Ch 0.6 N-Ch 0.9 P-Ch 1.85 Qgs Gate-Drain Charge Qgd Gate Resistance Rg f = 1 MHz pF P-Ch N-Channel VDS = 15 V, VGS = 4.5 V, ID = 4.8 A P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 3.2 A www.vishay.com 2 N-Ch N-Ch 2.7 P-Ch 7.7 nC Ω Document Number: 73787 S-72204-Rev. B, 22-Oct-07 Si5511DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typa Max N-Ch 9 12 P-Ch 15 23 N-Ch 45 68 P-Ch 78 117 N-Ch 48 72 50 Test Conditions Min Unit Dynamica td(on) Turn-On Delay Time tr Rise Time tf P-Channel VDD = - 15 V, RL = 18.1 Ω ID ≅ - 1.86 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time Fall Time N-Channel VDD = 15 V, RL = 3.95 Ω ID ≅ 3.8 A, VGEN = 4.5 V, Rg = 1 Ω P-Ch 33 N-Ch 28 42 P-Ch 65 98 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage ISM VSD N-Ch 2.6 P-Ch - 2.6 N-Ch 15 P-Ch - 10 IS = 2.4 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 1.5 A, VGS = 0 V P-Ch - 0.8 - 1.2 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 2.4 A, di/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 1.5 A, di/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A N-Ch 11.6 18 P-Ch 19.8 30 N-Ch 6.1 9.2 P-Ch 17.5 27 N-Ch 8.4 P-Ch 17.2 N-Ch 3.2 P-Ch 2.6 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73787 S-72204-Rev. B, 22-Oct-07 www.vishay.com 3 Si5511DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 4 VGS = 5 V thru 3 V VGS = 2.5 V I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 2 V 3 3 2 TC = 125 °C 1 TC = 25 °C VGS = 1.5 V 0 0.0 0.6 1.2 1.8 2.4 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.5 Transfer Characteristics 0.20 600 500 0.16 C - Capacitance (pF) Ciss 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 400 300 200 100 0.00 Coss Crss 0 0 3 6 9 12 15 0 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 1.6 VGS = 4.5 V ID = 4.8 A ID = 4.8 A 4 1.4 rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics rDS(on) - On-Resistance (mΩ) 1.0 VDS = 15 V 3 VGS = 24 V 2 1 1.2 VGS = 2.5 V ID = 3.7 A 1.0 0.8 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73787 S-72204-Rev. B, 22-Oct-07 Si5511DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 rDS(on) - Drain-to-Source On-Resistance (Ω) 20 10 I S - Source Current (A) TA = 150 °C 1 TA = 25 °C 0.1 0.01 0.001 0.0 ID = 4.8 A 0.10 0.08 0.06 TA = 125 °C TA = 25 °C 0.04 0.02 0.2 0.4 0.6 0.8 1.0 1.2 1 2 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.5 50 40 1.3 30 Power (W) VGS(th) (V) ID = 250 µA 1.1 0.9 20 10 0.7 0.5 - 50 - 25 0 25 50 75 100 125 0 10-4 150 10-3 10-2 10-1 1 10 100 600 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power 100 Limited by r DS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC BVDSS Limited 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73787 S-72204-Rev. B, 22-Oct-07 www.vishay.com 5 Si5511DC Vishay Siliconix 8 4 6 3 Power Dissipation (W) I D - Drain Current (A) N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited 4 2 1 2 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73787 S-72204-Rev. B, 22-Oct-07 Si5511DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 73787 S-72204-Rev. B, 22-Oct-07 www.vishay.com 7 Si5511DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 5 8 VGS = 3 V 6 VGS = 2.5 V 4 I D - Drain Current (A) I D - Drain Current (A) VGS = 5 V thru 3.5 V 4 VGS = 2 V 2 3 2 TA = 125 °C 1 TA = 25 °C VGS = 1.5 V 0 0.0 0.6 1.2 1.8 2.4 TA = - 55 °C 0 0.0 3.0 0.6 VDS - Drain-to-Source Voltage (V) 1.8 2.4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.5 500 0.4 400 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 1.2 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 300 Ciss 200 0.1 100 0.0 0 Coss Crss 0 2 4 6 8 10 0 5 ID - Drain Current (A) 10 15 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 1.8 ID = 2.3 A VGS = 4.5 V, ID = 2.3 A 1.6 4 VGS = 15 V rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 3 VGS = 24 V 2 1 1.4 VGS = 2.5 V, ID = 1.8 A 1.2 1.0 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73787 S-72204-Rev. B, 22-Oct-07 Si5511DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.40 rDS(on) - Drain-to-Source On-Resistance (Ω) 20 10 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 ID = 2.3 A 0.32 TA = 125 °C 0.24 0.16 TA = 25 °C 0.08 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 50 1.2 40 ID = 250 µA Power (W) VGS(th) (V) 1.1 1.0 30 20 0.9 10 0.8 0.7 - 50 - 25 0 25 50 75 100 125 150 0 10-4 10-3 TJ - Temperature (°C) 10-2 10-1 1 10 10 2 10 3 Time (s) Threshold Voltage Single Pulse Power 100 Limited by rDS(on)* I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.001 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 73787 S-72204-Rev. B, 22-Oct-07 www.vishay.com 9 Si5511DC Vishay Siliconix 4 1.6 3 1.2 Power Dissipation (W) I D - Drain Current (A) P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 0.8 0.4 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73787 S-72204-Rev. B, 22-Oct-07 Si5511DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73787. Document Number: 73787 S-72204-Rev. B, 22-Oct-07 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1