1N6263 1N5711 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • 400 mWatt Small Signal Schottky Diode 60 to 70 Volts High Reverse Breakdown Voltage Low Forward Voltage Drop For General Purpose Application Maximum Ratings • • • DO-35 Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 300°C/W Junction To Ambient Electrical Characteristics @ 25°C Unless Otherwise Specified Peak Reverse Voltage 1N6263 1N5711 1() * +,- ' ;<< ;4! Power Dissipation Junction Temperature +$ ,1' 1 Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance D VRRM - 60V 70V => PTOT TJ <- !- 400mW 125°C VF 0.41V 1.0V IFM = 1.0mA; IFM = 15mA IR 200nA VR=50Volts TJ = 25°C 2pF Cathode Mark B Infinite Heat sink D '@ 1'> A1 ) Measured at 1.0MHz, VR=0V IF=5mA Reverse Recovery Trr VR = 6V 1.0nS Time RL=100Ω Note: Valid provided that leads at a distance of 4mm from case are kept ambient temperature. CJ A C DIMENSIONS DIM A B C D INCHES MIN ------1.000 MAX .166 .079 .020 --- www.cnelectr .com MM MIN ------25.40 MAX 4.2 2.00 .52 --- NOTE 1N6263 1N5711 Fig.1 Typical variation of fwd. current vs forward. voltage for primary conduction through the Schottky barrier Fig.2 Typical forward conduction curve of combination Schottky barrier and PN junction guard ring mA mA IF IF VF VF Fig.3 Typical variation of reverse current at various temperatures Fig.4 Typical capacitance curve as a function of reverse voltage PF mA TJ=25 C IR CJ VR VR www.cnelectr .com