VISHAY TCRT1000

TCRT1000/TCRT1010
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
TCRT1000
Description
TCRT1010
The TCRT1000 and TCRT1010 are reflective sensors
which include an infrared emitter and phototransistor
in a leaded package which blocks visible light.
Features
• Package type: Leaded
• Detector type: Phototransistor
• Dimensions:
L 7 mm x W 4 mm x H 2.5 mm
• Peak operating distance: 1 mm
•
•
•
•
•
•
e4
Operating range: 0.2 mm to 4 mm
Typical output current under test: IC = 0.5 mA
Daylight blocking filter
Emitter wavelength 950 nm
Lead (Pb)-free soldering released
Lead (Pb)-free component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
A
C
E
C
19155
Applications
Optoelectronic scanning and switching devices i.e.,
index sensing, coded disk scanning etc. (optoelectronic encoder assemblies for transmissive sensing).
Order Instructions
Part Number
Remarks
Minimum Order Quantity
TCRT1000
Straight leads
1000 pcs, 1000 pcs/bulk
TCRT1010
Bent leads
1000 pcs, 1000 pcs/bulk
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Coupler
Parameter
Total power dissipation
Test condition
Tamb ≤ 25 °C
Symbol
Value
Unit
Ptot
200
mW
Ambient temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
Soldering temperature
Document Number 83752
Rev. 1.6, 04-Sep-06
2 mm distance to package,
t≤5s
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TCRT1000/TCRT1010
Vishay Semiconductors
Input (Emitter)
Symbol
Value
Unit
Reverse voltage
Parameter
Test condition
VR
5
V
Forward current
IF
50
mA
IFSM
3
A
PV
100
mW
Tj
100
°C
Unit
Forward surge current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Output (Detector)
Symbol
Value
Collector emitter voltage
Parameter
Test condition
VCEO
32
V
Emitter collector voltage
VECO
5
V
Collector current
Tamb ≤ 25 °C
Power dissipation
Junction temperature
IC
50
mA
PV
100
mW
Tj
100
°C
P - Power Dissipation (mW)
300
Coupled device
200
Phototransistor
100
IR - diode
0
25
0
95 11071
50
75
100
Tamb - Ambient Temperature (°C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Coupler
Symbol
Min
Typ.
Collector current
Parameter
VCE = 5 V, IF = 20 mA,
d = 1 mm (figure 2)
Test condition
IC1)
0.3
0.5
Cross talk current
VCE = 5 V, IF = 20 mA (figure 1)
ICX2)
1
µA
Collector emitter saturation
voltage
IF = 20 mA, IC = 0.1 mA,
d = 1 mm (figure 2)
VCEsat1)
0.3
V
1)
Measured with the ‘Kodak neutral test card", white side with 90% diffuse reflectance
2)
Measured without reflecting medium
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2
Max
Unit
mA
Document Number 83752
Rev. 1.6, 04-Sep-06
TCRT1000/TCRT1010
Vishay Semiconductors
Input (Emitter)
Parameter
Test condition
Symbol
Forward voltage
IF = 50 mA
VF
Radiant intensity
IF = 50 mA, tP = 20 ms
Ie
Peak wavelength
IF = 100 mA
λP
Virtual source diameter
Method: 63 % encircled energy
Ø
Test condition
Min
Typ.
Max
Unit
1.25
1.6
V
7.5
mW/sr
940
nm
1.2
mm
Output (Detector)
Parameter
Symbol
Min
IC = 1 mA
VCEO
32
Emitter collector voltage
IE = 100 µA
VECO
5
Collector dark current
VCE = 20 V, IF = 0, E = 0
ICEO
Collector emitter voltage
Typ.
Max
Unit
V
V
200
nA
Reflecting medium
(Kodak neutral test card)
~
~~
~
~~
d
Detector
Emitter
A
C
E
C
95 10893
Figure 2. Test Condition
Document Number 83752
Rev. 1.6, 04-Sep-06
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TCRT1000/TCRT1010
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100
CTR - Current Transfer Ratio (%)
I F - Forward Current (mA)
1000
100
10
1
d = 1 mm
VCE = 5 V
10
1
0.1
0.1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F - Forward Voltage (V)
96 11862
10
2.0
1.5
1.0
0.5
0
- 25
VCE = 5 V
I F = 20 mA
d = 1 mm
0
VCE = 5 V
I F = 20 mA
1
0.1
0.01
25
75
50
0
100
Tamb - Ambient Temperature (°C)
95 11074
4
2
8
6
10
d - Distance (mm)
95 11077
Figure 4. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 7. Collector Current vs. Distance
10.0
120
Kodak Neutral Card
(White Side)
d = 1 mm
1.0
I Crel - Relative Collector Current
I C - Collector Current (mA)
100
10
Figure 6. Current Transfer Ratio vs. Forward Current
I C - Collector Current (mA)
CTR rel - Relative Current Transfer Ratio
Figure 3. Forward Current vs. Forward Voltage
I F = 50 mA
20 mA
10 mA
5 mA
0.1
2 mA
0.01
Sensing Object
100
s
80
d
60
40
d = 1 mm
VCE = 5 V
I F = 20 mA
20
0
0.1
95 11075
1
10
100
V CE - Collector Emitter Voltage (V)
Figure 5. Collector Current vs. Collector Emitter Voltage
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4
1
I F - Forward Current (mA)
95 11076
1
95 11078
2
3
4
5
6
s - Displacement (mm)
Figure 8. Relative Collector Current vs. Displacement
Document Number 83752
Rev. 1.6, 04-Sep-06
TCRT1000/TCRT1010
Vishay Semiconductors
Package Dimensions in mm
14768
14769
Document Number 83752
Rev. 1.6, 04-Sep-06
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TCRT1000/TCRT1010
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83752
Rev. 1.6, 04-Sep-06
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 18-Jul-08
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