SD101AWS THRU SD101CWS Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features l Low Reverse Recovery Time l Low Reverse Capacitance l Low Forward Voltage Drop Small Signal Schottky Diodes l Guard Ring Construction for Transient Protection Mechanical Data SOD323 l Case: SOD-323 plastic case l Terminals: Solderable per MIL-STD-202, Method 208 A l Polarity: Indicated by Cathode Band B Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Maximum sigle cycle surge 10us square wave C E SD101AWS SD101BWS SD101CWS 60V 50V 40V H D 42V 35V 28V 2.0A Power Dissipation(Note 1) Thermal Resistance, Junction to Ambient Pd 400mW R 650°C/W Junction Tmperature Tj 125 C Operation/Storage Temp. Range TSTG -55 to +150 C DIM o o Electrical Characteristics @ 25oC Unless Otherwise Specified Charateristic Symbol Max Leakage Current SD101AWS 200nA SD101BWS IR 200nA SD101CWS 200nA Maximum Forward SD101AWS Voltage Drop SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS VF Junction Cap. SD101AWS SD101BWS SD101CWS Cj Reverse Recovery Time trr 0.41V 0.4V .39V 1V 0.95V 0.9V 2.0pF 2.1pF 2.2pF 1ns J G IFSM Test Condition V R =50V V R =40V V R =30V A B C D E G H J DIMENSIONS INCHES MM MIN MAX MIN MAX .090 .107 2.30 2.70 .063 .071 1.60 1.80 .045 .053 1.15 1.35 .031 .045 0.80 1.15 .010 .016 0.25 0.40 .004 .018 0.10 0.45 .004 .010 0.10 0.25 ----.006 ----0.15 SUGGESTED SOLDER PAD LAYOUT 0.074" I F =1mA I F =15mA 0.027” V R =0V, f=1.0MHz I F =IR =5mA, recover to 0.1I R Note: 1. Valid provided that electrodes are kept at ambient temperature www.cnelectr.com 0.022” NOTE SD101AWS thru SD101CWS Figure 2. Typical forward conduction curve of combination Schottky barrier and PN junction guard ring Figure 1. Typical variation of forward. current vs.fwd. Voltage for primary conduction through the schottky barrier mA mA A B A B C C IF IF VF VF Figure 4. Typical capacitance curve as a function of reverse voltage Figure 3.Typical variation of reverse current at versus temperature mA mA IR B A C IR VR www.cnelectr.com VR