CHONGQING RL257

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
RL251 THRU RL257
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V
CURRENT:2.5A
FEATURES
R-3
·High reliability
·Low leakage
·Low forward voltage drop
·High current capability
1.0(25.4)
MIN.
.160(4.1)
.138(3.5)
1.0(25.4)
MIN.
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
·Weight: 0.60 grams
.043(1.1)
.039(1.0)
DIA.
.160(4.1)
.138(3.5)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL RL251 RL252 RL253 RL254 RL255 RL256 RL257
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
Maximum Average Forward rectified Current
at TA=75°C
Io
2.5
A
IFSM
80
A
VF
1.1
V
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 2.5A
DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TA=25°C
@ TA=100°C
IR
Maximum Full Load Reverse Current Average,
Full Cycle .375”(9.5mm) lead length at TL=75°C
CJ
Typical Junction Capacitance (Note)
RθJA
Typical Thermal Resistance
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
1
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V
V
V
5.0
500
µA
30
20
40
pF
°C/W