COMCHIP SMD Gen er al Purpose Rect ifier s SMD Diodes Specialist CGRB301-G Thru. CGRB307-G Glass Passivated Type Reverse Voltage: 50 to 1000 Volts Forward Current: 2.0 Amp RoHS Device DO-214AA (SMB) Features -Ideal for surface mount applications. 0.185(4.70) 0.160(4.06) -Easy pick and place. -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) -Built in strain relief. -High surge current capability. 0.220(5.59) 0.200(5.08) 0.012(0.31) 0.006(0.15) Mechanical data 0.096(2.44) 0.083(2.13) -Case: JEDEC DO-214AA, molded plastic. 0.008(0.20) 0.004(0.10) 0.050(1.27) 0.030(0.76) -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: Color band denotes cathode end. Dimensions in inches and (millimeter) -Approx. weight: 0.093 grams Maximum Ratings and Electrical Characteristics Symbol CGRB 301-G CGRB 302-G CGRB 303-G CGRB 304-G CGRB 305-G CGRB 306-G CGRB 307-G Units Max. repetitive peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage V DC 50 100 200 400 600 800 1000 V Max. RMS voltage V RMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 100 A Max. average forward current IO 3.0 A Max. instantaneous forward voltage at 3.0A VF 1.1 V Max. DC reverse current at T A =25 OC rated DC blocking voltage T A =125 OC IR 5.0 150 μA RθJA 50 TJ 150 O C T STG -55 to +150 O C Parameter Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature O C/W Notes: 1. Thermal resistance from junction to terminal mounted on P.C.B. with 5.0×5.0 mm 2 square (0.13mm thick) land area. REV:A Page 1 QW-BG004 Comchip Technology CO., LTD. COMCHIP SMD Gen er al Purpose Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CGRB301-G thru CGRB307-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 1000 10 T J =25 OC Pulse width 300μS 4% duty cycle O Rever s e C urr e n t (μA ) F o r w a rd C u rren t (A) T J =125 C 100 10 1 T J =25 OC 1 0.1 0.1 0.01 0.01 0 20 40 60 80 100 120 0 140 0.2 Fig.3 Junction Capacitance 0.6 0.8 1.0 1.2 1.4 Fig.4 Current Derating Curve 100 3.5 Average Forward Current (A) J u n c ti o n C apaci t ance (p F ) 0.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) 10 T J =25 OC f=1MHz Vsig=50mVp-p 1 0.1 Single phase, half wave 60Hz, resistive or inductive load 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 100 0 25 50 75 100 125 150 175 Ambient Temperature ( OC) Reverse Voltage (V) Fig.5 Non-repetitive Forward Surge Current 120 Pe a k F o r w a rd S u rge C u r rent (A ) O T J =25 C 8.3ms single half sine wave, JEDEC method 100 80 60 40 20 0 1 10 100 Number of Cycles at 60Hz REV:A Page 2 QW-BG004 Comchip Technology CO., LTD.