COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PTOT Power Dissipation TJ Junction Temperature TS Storage Temperature @ TC = 25° Value BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 Page 1 of 4 180 200 250 300 400 500 Unit V V 10 V 6 A 3 A 87.5 Watts -65 to +200 °C COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value Unit 2 °C/W BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDY26, 183T2 BDY27, 184T2 BDY28A, 185T2A BDY28B, 185T2B BDY28C, 185T2C BDY26 BDY27 BDY28 180 200 250 250 220 - - BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 - - VCE=250 V VBE=0 V BDY26, 183T2 - - VCE=300 V VBE=0 V BDY27, 184T2 - - VCE=400 V VBE=0 V BDY28, 185T2 - - VCEO(BR) Collector-Emitter Breakdown Voltage (*) IC=50 mA, IB=0 ICEO Collector-Emitter Cutoff Current VCE=180 V VCE=200 V VCE=250 V IEBO ICES Emitter-Base Cutoff Current VEB=10 V Collector-Emitter Cutoff Current Min Typ Mx Unit Page 2 of 4 - V 1.0 mA 1.0 mA 1.0 mA COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 VCE(SAT) Collector-Emitter saturation Voltage (*) V(BR)CBO Collector-Base Breakdown Voltage (*) VBE(SAT) Base-Emitter Voltage (*) BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 - - 0.6 BDY26, 183T2 300 - - IC=3 mA BDY27, 184T2 400 - - 500 - - - IC=2.0 A, IB=0.25 A BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 - 1.2 V BDY28, 185T2 A B C A B C - 15 30 75 55 65 90 20 45 82 45 90 180 - IC=2.0 A, IB=0.25 A VCE=4 V, IC=1 A h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=2 A - V V fT Transition Frequency VCE=15 V, IC=0.5 A, f=10 MHz BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 10 - - MHz t d + tr Turn-on time IC=5 A, IB=1 A BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 - - 1 µs t s + tf Turn-off time IC=5 A, IB1=1 A, IB2=-1 A A B C - - 2 3.5 6 µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% Page 3 of 4 COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 MECHANICAL DATA DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,45 38,8 30,09 17,11 9,78 11,09 8,33 1,62 19,43 1 4,08 Base Emitter Collector Page 4 of 4