PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25° PD Total Power Dissipation @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range Value 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 Unit -60 -40 -60 -60 -5 -5 -600 V V V mA 0.6 Watts 3 200 °C -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in free air RthJ-c Thermal Resistance, Junction to case 2N2905A 2N2905 2N2905A 2N2905 Value Unit 58.3 °C/W 292 °C/W ELECTRICAL CHARACTERISTICS COMSET SEMICONDUCTORS 1/3 PNP 2N2905 – 2N2905A TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCB=-50 V, IE=0 ICBO Collector Cutoff Current VCB=-50 V, IE=0, Tj=150°C ICEX VCEO VCBO VEBO Collector Cutoff Current VCE=-30 V, VBE=0.5V Collector Emitter Breakdown IC=-10 mA, IB=0 Voltage Collector Base Breakdown IC=-10 µA, IE=0 Voltage Emitter Base Breakdown IE=-10 µA, IC=0 Voltage IC=-0.1 mA, VCE=-10 V IC=-1 mA, VCE=-10 V hFE IC=-10 mA, VCE=-10 V DC Current Gain IC=-150 mA, VCE=-10 V (1) IC=-500 mA, VCE=-10 V (1) VCE(SAT) VBE(SAT) Symbol fT Symbol Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) Ratings IC=-150 mA, IB=-15 mA IC=-500 mA, IB=-50 mA IC=-150 mA, IB=-15 mA IC=-500 mA, IB=-50 mA 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A -60 -40 2N2905 2N2905A -60 2N2905 2N2905A -5 2N2905 2N2905A 75 35 2N2905 2N2905A 100 50 2N2905 2N2905A 100 75 2N2905 2N2905A 100 40 2N2905 2N2905A 50 30 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 Test Condition(s) IC =-50 mA, VCE =-20 V f = 100MHz Transition frequency Ratings Delay time Rise time IC=-150 mA ,IB =-15 mA -VCC=-30 V CCBO Collector-Base capacitance IE= Ie = 0 ,VCB=-10 V f = 100kHz CEBO Emitter-Base capacitance IC= Ic = 0 ,VEB=-2 V f = 100kHz 2N2905A 2N2905 2N2905A 2N2905 - -10 -20 -10 -20 - -50 nA - - V - - V - - V - 300 120 - - - -0.4 - -1.6 - -1.3 - -2.6 µA V - - MHz Min Typ Mx Unit - - 10 40 ns - - 8 pF - - 30 pF (1) Pulse conditions : tp < 300 µs, δ =2% COMSET SEMICONDUCTORS nA Min Typ Mx Unit 2N2905A 200 2N2905 Test Condition(s) td tr Min Typ Mx Unit 2/3 PNP 2N2905 – 2N2905A MECHANICAL DATA CASE TO-39 DIMENSIONS A B C D E F G H L Pin 1 : Pin 2 : Case : mm 6,25 13,59 9,24 8,24 0,78 1,05 0,42 45° 4,1 Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3