PNP BDW84C PNP SILICON DARLINGTONS POWER TRANSISTORS The BDW84C is silicon epitaxial-base PNPpower monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary is BDW83C. ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO -IC -ICM -IB Pt TJ TStg Ratings Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature -IB = 0 -IE = 0 -IC = 0 tp = 10ms @ TC = 40° Value Unit 100 100 5 15 40 0.5 130 150 -65 to +150 V V V A A A Watts °C °C Value Unit 0.96 °C/W THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) -ICEO Collector-Emitter Sustaining Voltage (1) Collector Cutoff Current -ICBO Collector Cutoff Current -IEBO Emitter Cutoff Current hFE DC Current Gain (1) -VCEO(SUS) -VCE(SAT) -VBE(on) -Vf Collector-Emitter saturation Voltage (1) Base-Emitter Voltage (1) Diode Forward Voltage (1) -IC=30 mA -VCE=40 V , -IB=0 -VCE= 100V , -IE= 0 -VCE= 100 V , -IE= 0, Tcase = 150°C -VEB=5.0 V, -IC=0 -IC=6 A , -VCE=3.0 V -IC=15 A , -VCE=3.0 V -IC=6 A , -IB=12 mA -IC=15 A , -IB=150 mA -IC=6 A , -IB=3 A -IF = 10A COMSET SEMICONDUCTORS Min Typ Mx Unit 100 - - V - - 1 0.5 5 2 mA 750 100 - - 20 K 2.5 4 2.5 4 1/2 mA mA V V PNP BDW84C Symbol Ratings Test Condition(s)Sec Min Typ Mx Unit ton Turn-on time -IC=10 A , -VCC=30 V - 0.9 - toff Turn-off time -IC=5 A , -VCC=250 V -IB1 = IB2 =40mA - 6 - µs (1) Pulse Duration = 300 µs, Duty Cycle <= 1.5% MECHANICAL DATA CASE TO-3P (TO-218) Pin 1 : Pin 2 : Pin 3 : Base Collector Emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2