CYStech Electronics Corp. Spec. No. : C906N3 Issued Date : 2003.05.12 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BC817N3 Description • The BC817N3 is designed for general purpose switching and amplification applications. • Complementary to BC807N3. Features • High current (max. 500mA) • Low voltage (max 45V). Symbol Outline BC817N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature BC817N3 Symbol Limits Unit VCBO VCEO VEBO IC ICP Pd Tj Tstg 50 45 5 500 1 225 150 -55~+150 V V V mA A mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C906N3 Issued Date : 2003.05.12 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 50 45 5 100 40 100 - Typ. 5 Max. 100 100 700 1.2 600 - Unit V V V nA nA mV V MHz pF Test Conditions IC=10µA IC=1mA IE=10µA VCE=20V VEB=5V IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=1V, IC=100mA VCE=1V, IC=500mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1: Rank Range BC817N3 16 100--250 25 160--400 40 250--600 CYStek Product Specification Spec. No. : C906N3 Issued Date : 2003.05.12 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage-(mV) Current Gain---HFE VCE(SAT)@IC=10IB VCE=10V 100 VCE=1V 10 100 10 0.1 1 10 100 1000 0.1 Collector Current---IC(mA) 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 250 10000 Power Dissipation---PD (mW) Saturation Voltage-(mV) VBE(SAT)@IC=10IB 1000 100 150 100 50 0 0.1 1 10 100 Collector Current---IC(mA) BC817N3 200 1000 0 50 100 150 Ambient Temperature---TA(℃ ) CYStek Product Specification Spec. No. : C906N3 Issued Date : 2003.05.12 CYStech Electronics Corp. Revised Date : Page No. : 4/4 SOT-23 Dimension A Marking: L 3 B TE 8F S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BC817N3 CYStek Product Specification