CYSTEKEC BTB1188M3

CYStech Electronics Corp.
Spec. No. : C812M3
Issued Date : 2003.05.25
Revised Date : 2006.02.15
Page No. : 1/5
Low Vcesat PNP Epitaxial Planar Transistor
BTB1188M3
Features
• Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -2A / -0.5A
• Excellent current gain characteristics
• Complementary to BTD1766M3
• Pb-free package
Symbol
Outline
BTB1188M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Power Dissipation
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Pd
Tj
Tstg
Limits
Unit
-40
-30
-5
-2
-5
(Note 1)
0.5
2 (Note 2)
150
-55~+150
V
V
V
A
A
W
W
°C
°C
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
BTB1188M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C812M3
Issued Date : 2003.05.25
Revised Date : 2006.02.15
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-40
-30
-5
82
-
Typ.
100
50
Max.
-1
-1
-1
560
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
IC=-3A, IB=-0.1A
VCE=-3V, IC=-0.5A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
P
Range
82~180
Q
120~270
R
S
180~390
270~560
Ordering Information
Device
BTB1188M3
BTB1188M3
Package
SOT-89
(Pb-free)
Shipping
Marking
1000 pcs / Tape & Reel
AE
CYStek Product Specification
Spec. No. : C812M3
Issued Date : 2003.05.25
Revised Date : 2006.02.15
Page No. : 3/5
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
100
Saturation Voltage---(mV)
Current Gain---HFE
VCE=5V
VCE=2V
VCE=1V
1000
[email protected]=40IB
100
10
VCESAT=20IB
VCESAT=10IB
1
10
1
10
100
1000
1
10000
10
Saturation Voltage vs Collector Current
1000
10000
Power Derating Curves
2.5
Power Dissipation---PD(W)
10000
Saturation Voltage---(mV)
100
Collector Current---IC(mA)
Collector Current---IC(mA)
[email protected]=10IB
1000
2
See note 2 on page 1
1.5
1
0.5
0
100
1
BTB1188M3
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C812M3
Issued Date : 2003.05.25
Revised Date : 2006.02.15
Page No. : 4/5
Reel Dimension
Carrier Tape Dimension
BTB1188M3
CYStek Product Specification
Spec. No. : C812M3
Issued Date : 2003.05.25
Revised Date : 2006.02.15
Page No. : 5/5
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
H
C
AE
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1188M3
CYStek Product Specification