CYSTEKEC BTB1205I3

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1205I3
BVCEO
IC
RCESAT
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 1/ 6
-20V
-5A
127mΩ typ.
Features
• Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA
• Excellent DC current gain characteristics
• Fast switching speed
• Large current capacity
• RoHS compliant package
Applications
• Strobe, voltage regulators, relay drivers, lamp drivers
Symbol
Outline
BTB1805I3
B:Base
C:Collector
E:Emitter
BTB1205I3
TO-251
B C E
CYStek Product Specification
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 2/ 6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Note : 1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Pd
Tj
Tstg
Limits
-25
-20
-5
-5
-8 (Note 1)
Unit
V
V
V
A
A
-0.5
1
10
150
-55~+150
W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
Cob
Min.
-25
-20
-5
190
60
-
Typ.
-380
-1.0
320
60
Max.
-0.5
-0.5
-500
-1.3
380
-
Unit
V
V
V
μA
μA
mV
V
MHz
pF
Test Conditions
IC=-10μA, IE=0
IC=-1mA, IB=0
IE=-10μA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
IC=-3A, IB=-60mA
IC=-3A, IB=-60mA
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
VCE=-5V, IC=-200mA, f =100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTB1205I3
BTB1205I3
Package
TO-251
(RoHS compliant)
Shipping
Marking
80 pcs / tube, 50 tubes / box
B1205
CYStek Product Specification
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 3/ 6
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage---(mV)
Current Gain---HFE
VCE=2V
100
VCE=1V
VCESAT
1000
IC=100IB
IC=40IB
IC=50IB
100
IC=30IB
10
10
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Output Characteristics
7
10000
Collector Current---IC(A)
Saturation Voltage---(mV)
IB=50mA
6
[email protected]=10IB
1000
5
IB=25mA
4
IB=20mA
IB=15mA
3
IB=10mA
2
IB=5mA
1
IB=0
100
0
1
10
100
1000
Collector Current---IC(mA)
0
10000
Output Characteristics
6
Power Derating Curves
12
4
Power Dissipation---PD(W)
IB=20mA
3.5
Collector Current---IC(A)
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
3
2.5
IB=10mA
2
1.5
IB=6mA
1
IB=4mA
IB=2mA
0.5
IB=0
0
0
BTB1205I3
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
10
8
6
4
2
No heat sink
0
6
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 4/ 6
Characteristic Curves(Cont.)
On Voltage vs Collector Current
10000
On Voltage---(mV)
[email protected]=2V
1000
100
1
BTB1205I3
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 5/ 6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
BTB1205I3
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
CYStek Product Specification
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 6/ 6
CYStech Electronics Corp.
TO-251 Dimension
A
B
C
Marking:
D
B1205
F
G
3
K
E
I
H
2
1
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
J
*: Typical
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2441
0.2677
0.2677
0.2835
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.20
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
*0.1811
0.0449
0.0346
0.2047
0.2165
Millimeters
Min.
Max.
6.50
*4.60
1.14
0.88
5.20
5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead :KFC ; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1205I3
CYStek Product Specification