CYSTEKEC BTB1424AD3

CYStech Electronics Corp.
Spec. No. : C817D3
Issued Date : 2005.05.16
Revised Date :2006.04.21
Page No. : 1/4
Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1424AD3
Features
• Excellent DC current gain characteristics
• Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA.
• Complementary to BTD2150AD3
• Pb-free package
Symbol
Outline
BTB1424AD3
TO-126ML
B:Base
C:Collector
E:Emitter
EC B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed) (Note 1)
Power Dissipation(TA=25℃)
Power Dissipation(TC=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
-50
-50
-6
-3
-5
1
10
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
BTB1424AD3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C817D3
Issued Date : 2005.05.16
Revised Date :2006.04.21
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*hFE
fT
Cob
Min.
-50
-50
-6
82
-
Typ.
240
35
Max.
-0.1
-0.1
-0.4
-0.5
560
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-20V
VEB=-5V
IC=-1A, IB=-50mA
IC=-2A, IB=-100mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-500mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
hFE range
BTB1424AD3
P
Q
R
S
82~180
120~270
180~390
270~560
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C817D3
Issued Date : 2005.05.16
Revised Date :2006.04.21
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
Saturation Voltage---(mV)
Current Gain---HFE
VCE=5V
VCE=2V
100
VCE=1V
1000
[email protected]=60IB
100
10
VCESAT=30IB
VCESAT=10IB
10
1
1
10
100
1000
10000
1
10
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Power Derating Curve
1.2
Power Dissipation---PD(W)
10000
Saturation Voltage---(mV)
100
1000
Collector Current---IC(mA)
[email protected]=10IB
1000
100
1
0.8
0.6
0.4
0.2
0
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Case Temperature---TA(℃)
200
Power Derating Curve
Power Dissipation---PD(W)
12
10
8
6
4
2
0
0
BTB1424AD3
50
100
150
Case Temperature---TC(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C817D3
Issued Date : 2005.05.16
Revised Date :2006.04.21
Page No. : 4/4
TO-126ML Dimension
Marking:
B1424
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
CYStek Package Code: D3
*: Typical
Inches
Min.
Max.
0.118
0.134
0.071
0.087
0.026
0.034
0.046
0.054
0.018
0.024
0.307
0.323
0.425
0.441
DIM
A
A1
b
b1
c
D
E
Millimeters
Min.
Max.
3.000
3.400
1.800
2.200
0.660
0.860
1.170
1.370
0.450
0.600
7.800
8.200
10.800
11.200
DIM
e
e1
L
L1
P
Φ1
Φ2
Inches
Min.
Max.
*0.090
0.176
0.594
0.051
0.159
0.118
0.122
0.183
0.610
0.059
0.167
0.126
0.130
Millimeters
Min.
Max.
*2.28
4.460
4.660
15.100
15.500
1.300
1.500
4.040
4.240
3.000
3.200
3.100
3.300
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1424AD3
CYStek Product Specification