CYSTEKEC BTB1424AT3

CYStech Electronics Corp.
Spec. No. : C817T3
Issued Date : 2005.10.20
Revised Date :
Page No. : 1/4
Low Vcesat PNP Epitaxial Planar Transistor
BTB1424AT3
Features
• Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A
• Excellent current gain characteristics
• Complementary to BTD2150AT3
• Pb-free package
Symbol
Outline
BTB1424AT3
TO-126
B:Base
C:Collector
E:Emitter
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Limit
Unit
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj
Tstg
-50
-50
-6
-3
-7
1
10
150
-55~+150
V
V
V
A
A
*1
W
°C
°C
Note : *1. Single Pulse Pw≦350µs, Duty≦2%.
BTB1424AT3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C817T3
Issued Date : 2005.10.20
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-50
-50
-6
82
120
-
Typ.
-0.3
-1
240
35
Max.
-0.1
-0.1
-0.5
-1.5
560
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-40V
VEB=-5V
IC=-2A, IB=-0.1A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-0.5A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
Q
R
S
Range
120~270
180~390
270~560
Ordering Information
Device
BTB1424AT3
BTB1424AT3
Package
TO-126
(Pb-free)
Shipping
500 pcs / bag
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C817T3
Issued Date : 2005.10.20
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage---(mV)
Current Gain---HFE
VCE=5V
VCE=2V
100
VCE=1V
1000
[email protected]=60IB
100
10
VCESAT=30IB
VCESAT=10IB
10
1
1
10
100
1000
10000
1
10
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Power Derating Curve
1.2
10000
[email protected]=10IB
Power Dissipation---PD(W)
Saturation Voltage---(mV)
100
1000
Collector Current---IC(mA)
1000
100
1
0.8
0.6
0.4
0.2
0
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Ambient Temperature---TA(℃)
200
Power Derating Curve
Power Dissipation---PD(W)
12
10
8
6
4
2
0
0
BTB1424AT3
50
100
150
Case Temperature---TC(℃)
200
CYStek Product Specification
Spec. No. : C817T3
Issued Date : 2005.10.20
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
TO-126 Dimension
D
E
J
I
Marking:
K
A
M
B
α3
B1424
1 2 3
α4
G
C
Style: Pin 1.Emitter 2.Collector 3.Base
F
H
L
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
α1
α2
*: Typical
Inches
Min.
Max.
*3°
*3°
*3°
*3°
0.1500
0.1539
0.2752
0.2791
0.5315
0.6102
0.2854
0.3039
0.0374
0.0413
DIM
α1
α2
α3
α4
A
B
C
D
E
Millimeters
Min.
Max.
*3°
*3°
*3°
*3°
3.81
3.91
6.99
7.09
13.50
15.50
7.52
7.72
0.95
1.05
DIM
F
G
H
I
J
K
L
M
Inches
Min.
Max.
0.0280
0.0319
0.0480
0.0520
0.1709
0.1890
0.0950
0.1050
0.0450
0.0550
0.0450
0.0550
*0.0217
0.1378
0.1520
Millimeters
Min.
Max.
0.71
0.81
1.22
1.32
4.34
4.80
2.41
2.66
1.14
1.39
1.14
1.39
*0.55
3.50
3.86
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1424AT3
CYStek Product Specification