CYSTEKEC BTB1412J3

Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 1/7
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BVCEO
IC
RCESAT
BTB1412J3
-30V
-5A
75mΩ typ.
Features
• Low VCE(sat), VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A
• Excellent DC current gain characteristics
• Complementary to BTD2118J3
• Pb-free package
Symbol
Outline
BTB1412J3
TO-252
B:Base
C:Collector
E:Emitter
B
C
E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
BTB1412J3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
-40
-30
-6
-5
-10
1
10
150
-55~+150
V
V
V
*1
A
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-40
-30
-6
180
-
Typ.
120
60
Max.
-0.5
-0.5
-0.5
390
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-25V, IE=0
VEB=-5V, IC=0
IC=-4A, IB=-0.1A
VCE=-2V, IC=-0.5A
VCE=-6V, IC=-50mA, f=30MHz
VCB=-20V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTB1412J3
BTB1412J3
Package
TO-252
(Pb-free)
Shipping
Marking
2500 pcs / Tape & Reel
B1412
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 3/7
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
VCESAT
Saturation Voltage---(mV)
Current Gain---HFE
VCE=2V
100
VCE=1V
10
1000
IC=100IB
100
IC=30IB
10
100
1000
10000
1
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10
100
1000
Collector Current---IC(mA)
10000
Output Characteristics
10000
5
[email protected]=10IB
Collector Current---IC(A)
Saturation Voltage---(mV)
IC=50IB
10
1
1000
4.5
4
IB=20mA
3.5
3
IB=10mA
2.5
2
IB=6mA
1.5
1
IB=4mA
IB=2mA
0.5
0
100
1
10
100
1000
Collector Current---IC(mA)
10000
IB=0
0
2
4
Collector-to-Emitter Voltage---VCE(V)
6
Power Derating Curve
Output Characteristics
9
12
Power Dissipation---PD(W)
IB=50mA
8
Collector Current---IC(A)
IC=40IB
7
6
IB=25mA
5
IB=20mA
4
IB=15mA
IB=10mA
3
2
IB=5mA
1
IB=0
0
0
BTB1412J3
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
10
8
6
4
2
0
6
0
50
100
150
Case Temperature---TC(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 4/7
Characteristic Curves(Cont.)
Power Derating Curve
Power Dissipation---PD(W)
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃ )
Recommended soldering footprint
BTB1412J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTB1412J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1412J3
CYStek Product Specification
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 7/7
CYStech Electronics Corp.
TO-252 Dimension
Marking:
C
A
Device Name
D
B
Date Code
□□
G
F
L
B1412
3
H
E
K
2
Style: Pin 1.Base 2.Collector 3.Emitter
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2441 0.2677
0.2125 0.2283
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.20
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
*0.0906
0.0449
0.0346
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
*2.30
1.14
0.88
5.20
5.50
1.40
1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : KFC; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1412J3
CYStek Product Specification