Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BVCEO IC RCESAT BTB1412J3 -30V -5A 75mΩ typ. Features • Low VCE(sat), VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics • Complementary to BTD2118J3 • Pb-free package Symbol Outline BTB1412J3 TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms BTB1412J3 Symbol Limits Unit VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg -40 -30 -6 -5 -10 1 10 150 -55~+150 V V V *1 A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -30 -6 180 - Typ. 120 60 Max. -0.5 -0.5 -0.5 390 - Unit V V V μA μA V MHz pF Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-25V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IC=-50mA, f=30MHz VCB=-20V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTB1412J3 BTB1412J3 Package TO-252 (Pb-free) Shipping Marking 2500 pcs / Tape & Reel B1412 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 3/7 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 VCESAT Saturation Voltage---(mV) Current Gain---HFE VCE=2V 100 VCE=1V 10 1000 IC=100IB 100 IC=30IB 10 100 1000 10000 1 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10 100 1000 Collector Current---IC(mA) 10000 Output Characteristics 10000 5 VBESAT@IC=10IB Collector Current---IC(A) Saturation Voltage---(mV) IC=50IB 10 1 1000 4.5 4 IB=20mA 3.5 3 IB=10mA 2.5 2 IB=6mA 1.5 1 IB=4mA IB=2mA 0.5 0 100 1 10 100 1000 Collector Current---IC(mA) 10000 IB=0 0 2 4 Collector-to-Emitter Voltage---VCE(V) 6 Power Derating Curve Output Characteristics 9 12 Power Dissipation---PD(W) IB=50mA 8 Collector Current---IC(A) IC=40IB 7 6 IB=25mA 5 IB=20mA 4 IB=15mA IB=10mA 3 2 IB=5mA 1 IB=0 0 0 BTB1412J3 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 10 8 6 4 2 0 6 0 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 4/7 Characteristic Curves(Cont.) Power Derating Curve Power Dissipation---PD(W) 1.2 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA(℃ ) Recommended soldering footprint BTB1412J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTB1412J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1412J3 CYStek Product Specification Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 7/7 CYStech Electronics Corp. TO-252 Dimension Marking: C A Device Name D B Date Code □□ G F L B1412 3 H E K 2 Style: Pin 1.Base 2.Collector 3.Emitter I 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1412J3 CYStek Product Specification