CYStech Electronics Corp. Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1427M3 Features • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics Symbol Outline BTB1427M3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits Unit -20 -15 -6 -5 -10 (Note 1) 0.5 2 (Note 2) 150 -55~+150 V V V A W °C °C Note : 1. Single Pulse Pw=10ms 2. When mounted on a 40 ×40 ×0.7 mm ceramic board. BTB1427M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -20 -15 -6 120 - Typ. 120 60 Max. -0.5 -0.5 -1.0 560 - Unit V V V µA µA V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IC=-50mA, f =30MHz VCB=-20V, f =1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range Q 120~270 R 180~390 S 270~560 Ordering Information Device BTB1386M3 BTB1427M3 Package SOT-89 Shipping 1000 pcs / Tape & Reel Marking BH CYStek Product Specification Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 3/5 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 Saturation Voltage---VCE(SAT)(mV) 1000 Current Gain---HFE VCE=5V VCE=2V 100 VCE=1V 100 IC=40IB 10 IC=20IB IC=10IB 1 10 1 10 100 1000 1 10000 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Saturation Voltage vs Collector Current 10000 2.5 Power Dissipation---PD(mW) Saturation Voltage---VBE(SAT)(mV) 10 IC=10IB 1000 2 See Note 2 on page 1.5 1 0.5 0 100 1 10 100 1000 Collector Current---IC(mA) BTB1427M3 10000 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 4/5 Reel Dimension Carrier Tape Dimension BTB1427M3 CYStek Product Specification Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 5/5 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 H C BH* D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 DIM A B C D E Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1427M3 CYStek Product Specification