CYStech Electronics Corp. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772I3 BVCEO IC RCESAT -30V -3A 150mΩ Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882I3 • RoHS compliant package Symbol Outline BTB772I3 TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%. BTB772I3 Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit -40 -30 -5 -3 -7 1 10 150 -55~+150 *1 Unit V V V A A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Cob Min. -40 -30 -5 120 180 - Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 - Unit V V V μA μA V V MHz pF Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IE=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 2 Rank P E Range 180~390 250~500 Ordering Information Device BTB772I3 BTB772I3 Package TO-251 (RoHS compliant) Shipping Marking 80 pcs / tube, 50 tubes / box B772 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:3/5 Characteristic Curves Current gain vs Collector current Current gain---HFE 1000 VCE=5V VCE=2V 100 VCE=1V 10 1 10 100 1000 C-E saturation voltage---VCE(SAT)(mV) C-E saturation voltage vs Collector current 10000 10000 1000 100 IC=40IB 10 1 1 Collector current---IC(mA) 10 100 1000 10000 Collector current---IC(mA) Power derating curves B-E saturation voltage vs Collector current 10000 12 Power Dissipation---(W) B-E saturation---VBE(SAT)(mV) IC=20IB IC=10IB IC=10IB 1000 10 8 Tc=25℃ 6 4 Ta=25℃ 2 0 100 1 10 100 1000 10000 Collector current---IC(mA) 0 50 100 150 200 Temperature---(℃) Recommended Storage Condition: Temperature : 10~ 35 °C Humidity : 30~ 60% RH BTB772I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:4/5 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB772I3 CYStek Product Specification Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 CYStech Electronics Corp. Page:5/5 TO-251 Dimension A B C Marking: D F G 3 K E Device name B772 HFE rank □ □□ Date Code I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter J 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB772I3 CYStek Product Specification