CYSTEKEC BTD1664M3

CYStech Electronics Corp.
Spec. No. : C223M3
Issued Date : 2003.05.26
Revised Date :
Page No. : 1/4
Low Vcesat NPN Epitaxial Planar Transistor
BTD1664M3
Features
• The BTD1664M3 is designed for general purpose low frequency power amplifier applications.
• Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA
• Complementary to BTB1132M3
Symbol
Outline
BTD1664M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Pd
Tj
Tstg
Limits
Unit
40
20
5
800
1.5 (Note 1)
0.5
2
(Note 2)
150
-55~+150
V
V
V
mA
A
W
W
°C
°C
Note : 1. Single pulse, Pw = 20ms, duty ≤ 2%.
2. When mounted on a 40 ×40 ×0.7 mm ceramic board.
BTD1664M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223M3
Issued Date : 2003.05.26
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
40
20
5
82
82
80
-
Typ.
0.15
0.2
0.25
150
15
Max.
0.5
0.5
0.3
0.4
0.5
1
560
560
-
Unit
V
V
V
µA
µA
V
V
V
V
MHz
pF
Test Conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=20V. IE=0
VEB=4V,IC=0
IC=400mA, IB=20mA
IC=500mA, IB=50mA
IC=800mA, IB=80mA
VCE=2V, IC=500mA
VCE=2V, IC=100mA
VCE=2V, IC=500mA
VCE=2V, IC=800mA
VCE=5V, IE=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank
Range
P
82~180
Q
120~270
R
180~390
S
270~560
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Current Gain---HFE
Saturation Voltage---(mV)
[email protected]=2V
VCE(SAT)@IC=20IB
100
10
100
0.1
1
10
100
Collector Current--- IC(mA)
BTD1664M3
1000
1
10
100
1000
Collector Current ---IC(mA)
CYStek Product Specification
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
Spec. No. : C223M3
Issued Date : 2003.05.26
Revised Date :
Page No. : 3/4
Cutoff Frequency vs Collector Current
Cutoff Frequency---FT(GHZ)
1
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=20IB
100
[email protected]=2V
0.1
1
10
100
Collector Current ---IC(mA)
1000
1
10
Collector Current---IC(mA)
100
Power Derating Curve
Power Dissipation---PD(mW)
2.5
2
See Note 2 on page 1
1.5
1
0.5
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTD1664M3
CYStek Product Specification
Spec. No. : C223M3
Issued Date : 2003.05.26
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
H
C
BS*
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1664M3
CYStek Product Specification