CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3 Description • High BVCEO • High current capability • Pb-free package Symbol Outline BTD1858A3 TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Junction Temperature Storage Temperature BTD1858A3 Symbol Limits Unit VCBO VCEO VEBO IC ICP PD Tj Tstg 180 180 5 1.5 3 750 150 -55~+150 V V V A A mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 2/9 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 180 5 180 30 - Typ. 0.15 140 27 Max. 1 1 0.3 0.4 0.8 560 - Unit V V V µA µA V V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA IC=1A, IB=50mA VCE=5V, IC=5mA VCE=5V, IC=200mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range Q 180~390 R 270~560 Ordering Information Device BTD1858A3 BTD1858A3 Package TO-92 (Pb-free) Shipping Marking 2000 pcs / Tape & Box D1858 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 3/9 Characteristic Curves Output Characteristics Output Characteristics 0.7 IB=500uA 0.15 Collector Current---IC(A) Collector Current---IC(A) 0.2 IB=400uA IB=300uA 0.1 IB=200uA IB=100uA 0.05 IB=2.5mA 0.6 IB=2mA 0.5 IB=1.5m 0.4 IB=1mA 0.3 IB=0.5mA 0.2 0.1 IB=0 IB=0 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Output Characteristics Output Characteristics 1.6 1.2 1 IB=8m IB=6mA 0.8 IB=4mA 0.6 IB=25mA 1.4 Collector Current---IC(A) Collector Current---IC(A) IB=10mA IB=2mA 0.4 0.2 1.2 IB=20mA IB=15mA 1 IB=10mA IB=5mA 0.8 0.6 0.4 0.2 IB=0 IB=0 0 0 0 2 4 Collector-to-Emitter Voltage---VCE(V) 0 6 Current Gain vs Collector Current 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Saturation Voltage vs Collector Current 100000 1000 100 Saturation Voltage---(mV) VCE=5V Current Gain---HFE 6 VCE=2V VCE=1V VCE(SAT) 10000 IC=30IB 1000 IC=50IB 100 IC=20I IC=10IB 10 10 1 BTD1858A3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 4/9 Characteristic Curves(Cont.) Saturation Voltage vs Collector Current On Voltage vs Collector Current 1000 VBE(SAT)@IC=10IB On Voltage---(mV) Saturation Voltage---(mV) 10000 1000 VBE(on)@VCE=5 100 100 1 10 100 1000 Collector Current---IC(mA) 1 10000 10000 Output Capacitance vs Reverse Biased Voltage Power Derating Curve 800 100 Output capacitance---Cob(pF) 700 Power Dissipation---PD(mW) 10 100 1000 Collector Current---IC(mA) 600 500 400 300 200 100 10 0 0 50 100 150 Ambient Temperature---TA(℃) 200 0.1 1 10 100 Reverse Biased Voltage---VCB(V) Safe Operating Area 10 Forward Current---IC(A) PT=10ms PT=1ms 1 0.1 PT=100ms PT=1s 0.01 0.001 1.0 10.0 100.0 1000.0 Forward Voltage---VCE(V) BTD1858A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 5/9 Product Designation BTD1858A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 6/9 Recommended IR reflow profile Average ramp-up rate(25 to 150℃) Preheat temperature 150~180℃ Temperature maintained above 220℃ Time within 5℃ of actual peak temperature Peak temperature range Ramp-down rate Time 25℃ to peak temperature BTD1858A3 1~4 ℃/second 60~90 seconds 30 seconds min. 3~5 seconds 255+0/-5℃ 2~10 ℃/second 6 minutes max. CYStek Product Specification CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 7/9 Recommended temperature profile for wave soldering Recommendation: 1. Preheat temperature at solder side must be between 100 and 130 ℃ for 80 to 100 seconds. 2. Temperature ramp-up rate : 1~2 ℃/s 3. The temperature gradient between preheat and wave soldering must be smaller than +100 ℃. 4. Terminations must go through the wave simultaneously. 5. Travel through the wave from 255 to 260℃ for 2.5 to 3.5 seconds 6. Temperature ramp-down rate : 2~3 ℃/s BTD1858A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 8/9 TO-92 Taping Outline DIM A D D1 D2 E F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - BTD1858A3 Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch Millimeters Min. 4.33 3.80 0.36 4.33 1.5 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.0 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 CYStek Product Specification Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 9/9 CYStech Electronics Corp. TO-92 Dimension Marking: α2 A HFE Rank Product Name D1858 □ B 1 2 □□ 3 Date Code: Year+Month α3 C Year: 4→2004, 5→2005 Month: 1→1, 2→2, ‧‧‧, D 9→9, A→10, B→11, C→12 H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1858A3 CYStek Product Specification