CYSTEKEC BTD882I3

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882I3
BVCEO
IC
RCESAT
Spec. No. : C848I3-H
Issued Date : 2003.04.02
Revised Date : 2009.02.04
Page No. : 1/6
30V
3A
125mΩ typ.
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB772I3
• RoHS compliant package
Symbol
Outline
BTD882I3
TO-251
B:Base
C:Collector
E:Emitter
B CC E
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
BTD882I3
Symbol
Limit
Unit
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj
Tstg
40
30
5
3
7
1
10
150
-55~+150
V
V
V
A
A
*1
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848I3-H
Issued Date : 2003.04.02
Revised Date : 2009.02.04
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
5
150
180
-
Typ.
0.25
90
45
Max.
1
1
0.5
2
560
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
P
E
Range
180~390
270~560
Ordering Information
Device
BTD882I3
BTD882I3
Package
TO-251
(RoHS compliant)
Shipping
Marking
80 pcs / tube, 50 tubes/box, 10 boxes/carton
D882
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848I3-H
Issued Date : 2003.04.02
Revised Date : 2009.02.04
Page No. : 3/6
Characteristic Curves
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.25
1
0.2
IB=400uA
0.15
IB=300uA
IB=200uA
0.1
IB=100uA
0.05
0.9
0.8
Collector Current---IC(A)
Collector Current---IC(A)
IB=500uA
IB=2.5mA
IB=2mA
0.7
0.6
IB=1.5mA
0.5
IB=1mA
0.4
0.3
IB=500uA
0.2
0.1
IB=0
IB=0
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
3
4.5
IB=10mA
2.5
IB=8mA
IB=6mA
2
IB=25mA
4
Collector Current---IC(A)
Collector Current---IC(A)
6
IB=4mA
1.5
IB=2mA
1
0.5
IB=20mA
3.5
IB=15mA
3
IB=10mA
2.5
2
IB=5mA
1.5
1
0.5
IB=0
0
IB=0
0
0
1
2
3
4
5
6
0
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage---(mV)
Current Gain---HFE
VCE=5V
VCE=2V
100
VCE=1V
VCE(SAT)
1000
IC=100IB
IC=50IB
100
IC=20IB
10
10
1
BTD882I3
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848I3-H
Issued Date : 2003.04.02
Revised Date : 2009.02.04
Page No. : 4/6
Characteristic Curves(Cont.)
Saturation Voltage vs Collector Current
Capacitance vs Reverse-Biased Voltage
1000
VBE(SAT)@IC=10IB
Capacitance---(pF)
Saturation Voltage---(mV)
10000
1000
Cib
100
Cob
100
10
1
10
100
1000
Collector Current---IC(mA)
10000
0.1
1
10
Reverse-Biased Voltage---(V)
Power Derating Curve
1.2
12
1
10
Power Dissipation---PD(W)
Power Dissipation---PD(W)
Power Derating Curve
0.8
0.6
0.4
8
6
4
0.2
2
0
0
0
BTD882I3
25
50
75
100 125 150
Ambient Temperature---TA(℃)
100
175
200
0
25
50
75 100 125 150
Case Temperature---TC(℃)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848I3-H
Issued Date : 2003.04.02
Revised Date : 2009.02.04
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD882I3
CYStek Product Specification
Spec. No. : C848I3-H
Issued Date : 2003.04.02
Revised Date : 2009.02.04
Page No. : 6/6
CYStech Electronics Corp.
TO-251 Dimension
A
B
C
Marking:
D
F
G
3
K
E
Device
Name
D882
□□
Date
Code
I
H
2
1
Style: Pin 1.Base 2.Collector 3.Emitter
J
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
*: Typical
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2441
0.2677
0.2677
0.2835
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.20
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
*0.1811
0.0449
0.0346
0.2047
0.2165
Millimeters
Min.
Max.
6.50
*4.60
1.14
0.88
5.20
5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD882I3
CYStek Product Specification