CYSTEKEC HBNP2227S6R

CYStech Electronics Corp.
Spec. No. : C903S6R
Issued Date : 2003.03.18
Revised Date : 2004.06.19
Page No. : 1/6
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNP2227S6R
Features
• Includes a PN2222A chip and PN2907A chip in a SOT-363R package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
Equivalent Circuit
Outline
SOT-363R
HBNP2227S6R
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
75
40
6
600
TR2 (PNP)
-60
-60
-5
-600
200(total)
*1
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Note: *1 150mW per element must not be exceeded.
HBNP2227S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C903S6R
Issued Date : 2003.03.18
Revised Date : 2004.06.19
Page No. : 2/6
Characteristics (Ta=25°C)
• TR1 (NPN)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
hFE
hFE
hFE
*hFE
*hFE
*hFE
fT
Cob
Min.
75
40
6
35
50
75
100
50
40
300
-
Typ.
-
Max.
10
10
100
0.3
1.0
1.2
2.0
300
8
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=10 A
IC=10mA
IE=10 A
VCB=60V
VCE=60V,VEB=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100 A
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380 s, Duty Cycle≤2%
• TR2 (PNP)
Symbol
Min.
BVCBO
-60
BVCEO
-60
BVEBO
-5
ICBO
ICEX
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
hFE
75
hFE
100
hFE
100
*hFE
100
*hFE
50
fT
200
Cob
-
Typ.
-
Max.
-10
-50
-100
-0.4
-1.6
-1.3
-2.6
300
8
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=-10 A
IC=-10mA
IE=-10 A
VCB=-50V
VCE=-30V,VEB=-0.5V
VEB=-3V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100 A
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380 s, Duty Cycle≤2%
HBNP2227S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C903S6R
Issued Date : 2003.03.18
Revised Date : 2004.06.19
Page No. : 3/6
Characteristic curves
• TR1 (NPN)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage-(mV)
Current Gain---HFE
VCE(SAT)@IC=10IB
VCE=10V
100
VCE=1V
10
100
10
0.1
1
10
100
1000
0.1
1
10
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
VCE=20V
Cutoff Frequency(MHz)
VBE(SAT)@IC=10IB
Saturation Voltage-(mV)
1000
1000
10000
1000
100
100
0.1
1
10
100
Collector Current---IC(mA)
HBNP2227S6R
100
1000
1
10
100
Collector Current---IC(mA)
CYStek Product Specification
Spec. No. : C903S6R
Issued Date : 2003.03.18
CYStech Electronics Corp.
Revised Date : 2004.06.19
Page No. : 4/6
• TR2 (PNP)
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
1000
VCE(SAT)@IC=10IB
Saturation Voltage-(mV)
Current Gain---HFE
[email protected]=10V
100
100
10
10
0.1
1
10
100
0.1
1000
1
10
Collector Current---IC(mA)
Saturation Voltage & Collector Current
Cutoff Frequency vs Collector Current
1000
1000
10000
VCE=20V
Cutoff Frequency(MHz)
VBE(SAT)@IC=10IB
Saturation Voltage-(mV)
100
Collector Current---IC(mA)
1000
100
100
0.1
1
10
100
1000
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curves
Power Dissipation---PD(mW)
250
200
d ual
150
single
100
50
0
0
50
100
150
200
Ambient Temperature---TA(℃)
HBNP2227S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C903S6R
Issued Date : 2003.03.18
Revised Date : 2004.06.19
Page No. : 5/6
Reel Dimension
Carrier Tape Dimension
HBNP2227S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C903S6R
Issued Date : 2003.03.18
Revised Date : 2004.06.19
Page No. : 6/6
SOT-363R Dimension
Style:
Pin 1. Emitter1 (E1)
Pin 2. Base1 (B1)
Pin 3. Collector2 (C2)
Pin 4. Emitter2 (E2)
Pin 5. Base2 (B2)
Pin 6. Collector1 (C1)
Marking:
27R
6-Lead SOT-363R Plastic
Surface Mounted Package
CYStek Package Code: S6R
*:Typical
Inches
Min.
Max.
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026BSC
0.004
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
1.8
2.2
1.15
1.35
0.8
1.1
0.1
0.3
0.65BSC
0.1
DIM
J
K
N
S
Y
Inches
Min.
Max.
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
Millimeters
Min.
Max.
0.1
0.25
0.1
0.30
0.20 REF
2.00
2.40
0.30
0.40
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HBNP2227S6R
CYStek Product Specification