CYSTEKEC MTA06N03J3

Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
Page No. : 1/7
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID
RDS(ON)
MTA06N03J3
25V
80A
6mΩ
Features
• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
Outline
MTA06N03J3
TO-252
G:Gate
D:Drain
S:Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche [email protected] L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
Operating Junction and Storage Temperature Range
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
25
±20
80
50
170
53
140
40
83
45
-55~+175
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTA06N03J3
CYStek Product Specification
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
Page No. : 2/7
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.8
75
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
Min.
Typ.
Max.
Unit
Test Conditions
25
1
80
-
1.5
5.3
7.6
25
3
±100
1
25
6
9.5
-
V
V
nA
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VGS=±20, VDS=0V
VDS =20V, VGS =0V
VDS =20V, VGS =0V, Tj=125°C
VDS =10V, VGS =10V
VGS =10V, ID=30A
VGS =5V, ID=24A
VDS =5V, ID=24A
-
53
30
8
17
22
16
65
10
4840
620
435
1.2
-
-
32
12
80
170
1.3
-
IDSS
*ID(ON)
*RDS(ON)
*GFS
Dynamic
*Qg(VGS=10V)
*Qg(VGS=5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
μA
A
mΩ
S
nC
ID=30A, VDS=15V, VGS=10V
ns
VDS=15V, ID=25A, VGS=10V,
RGS=2.7Ω
pF
VGS=0V, VDS=15V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, VGS=0, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTA06N03J3
MTA06N03J3
Package
TO-252
(RoHS compliant & Halogen-free)
Shipping
Marking
2500 pcs / Tape & Reel
A06N03
CYStek Product Specification
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
Page No. : 3/7
CYStech Electronics Corp.
Characteristic Curves
ON-REGION CHARACTERISTIC
ON- RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE
100
3
4.5V
7V 5V
V GS= 3.5V
4.3V
4V
60
RDS(ON),NORMALIZED
I D,DRAIN - SOURCE CURRENT( A )
80
3.8V
40
3.5V
20
0
0
1
1.5
0.5
VDS ,DRAIN- SOURCEVOLTAGE( V )
2.5
2
DRAIN - SOURCE ON - RESISTANCE
10V
4.5V
2
5V
5.5V
1.5
6V
7V
10V
1
0.5
3
4V
2.5
0
ID = 30A
VGS= 10V
ID = 30A
0.020
RDS(ON) ,ON-RESISTANCE(OHM)
RDS(ON),NORMALIZED
DRAIN - SOURCE ON - RESISTANCE
ON-RESISTANCEVARIATION WITH GATE-TO-SOURCEVOLTAGE
0.025
1.4
1.2
1.0
0.8
-50
-25
0
25
50
75
100
125
150
0.015
0.010
TA = 125°C
TA = 25°C
0.005
0
175
BODYDIODEFORWARD VOLTAGEVARIATION WITH SOURCE
CURRENT AND TEMPERATURE
TRANSFERCHARACTERISTICS
60
100
VDS= 10V
VGS = 0V
I ,REVERSE DRAIN CURRENT( A )
TA = -55 °C
25 °C
80
I D,DRAIN CURRENT( A )
10
8
6
4
VGS ,GATETO SOURCEVOLTAGE
2
Tj ,JUNCTION TEMPERATURE(°C)
125 °C
60
40
TA = 125°C
10
1
25°C
0.1
-55°C
0.01
S
20
0
100
D
1.6
0.6
80
I ,DRAIN CURRENT( A )
ON- RESISTANCEVARIATION WITH TEMPERATURE
1.8
60
40
20
0
MTA06N03J3
2
1
VGS,GATETO SOURCEVOLTAGE
3
4
5
0.001
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD ,BODYDIODEFORWARD VOLTAGE( V )
CYStek Product Specification
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
Page No. : 4/7
CYStech Electronics Corp.
Characteristic Curves(Cont.)
CA P A CI T A N CE CH A RA CT ERI ST I CS
G A T E C H A R G E C H A R A C T E R IS T IC S
12
10
ID = 3 0 A
4
Ci ss
C-CAPACITANCE (pF)
VGS ,GATE-SOURCE VOLTAGE (V)
10
V DS =5V
8
10V
15V
6
4
10
3
Co ss
Cr ss
10
2
2
f = 1 M Hz
V G S= 0 V
0
0
Q
g
5
0
60
20
40
,G A T E C H A R G E (n C )
MAXIMUM SAFEOPERATINGAREA
it
Lim
on)
100
μs
Rds(
25
30
SINGLEPULSE
RθJC = 1.8°C/W
TC = 25°C
2500
1ms
POWER( W )
I D,DRAIN CURRENT( A )
50
10m
s
100m
s
DC
10
20
3000
10μ
s
20
15
SINGLEPULSEMAXIMUM POWERDISSIPATION
300
200
100
10
V D S - D RA I N - t o - SO U R CE V LT A G E ( V )
2000
1500
5
1000
2
1
0.5
VGS = 10V
SINGLEPULSE
RθJC= 1.8°C/W
Tc = 25°C
500
0
0.5 1
2
5
3
20
10
30
50
0.01
0.1
VDS ,DRAIN- SOURCEVOLTAGE
10
1
SINGLEPULSETIME(SEC)
100
1000
Transient Thermal Response Curve
r(t),Normalized Effective
Transient Thermal Resistance
1
0.5
Duty Cycle = 0.5
0.3
0.2
0.2
0.1 0.1
0.05
Notes:
0.05
DM
0.03
0.02
0.02
0.01
t1
1.Duty Cycle,D = t2
2.R =1.8°C/ W
3.TJ - TC = P * R (t)
θJC
Single Pulse
0.01
-2
10
θJC
4.R (t)=r(t) * R
θJC
-1
10
1
10
θJC
100
1000
t 1 ,Time (sec)
MTA06N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTA06N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTA06N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
Page No. : 7/7
TO-252 Dimension
C
A
Marking:
D
B
Device Name
G
F
L
Date code
3
H
E
K
2
I
Style: Pin 1.Gate 2.Drain 3.Source
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2441 0.2677
0.2125 0.2283
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.20
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
*0.0906
0.0449
0.0346
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
*2.30
1.14
0.88
5.20
5.50
1.40
1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : KFC; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA06N03J3
CYStek Product Specification