CYSTEKEC MTC3504BJ4

Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 1/11
CYStech Electronics Corp.
N & P-Channel Enhancement Mode Power MOSFET
MTC3504BJ4
N-CH
P-CH
BVDSS
40V
-40V
ID
12A
-9A
RDSON(MAX)
35mΩ
44mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
Equivalent Circuit
Outline
MTC3504BJ4
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
VDS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Limits
N-channel P-channel
40
±20
12
8
48
-40
±20
-9
-6
-36
25
18
-55~+175
Unit
V
A
W
°C
*2. Duty cycle ≤ 1%
MTC3504BJ4
CYStek Product Specification
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 2/11
CYStech Electronics Corp.
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
Rth,j-c
Thermal Resistance, Junction-to-ambient, max * 1
Rth,j-a
2
Note : *1 62.5°C/W when mounted on a 1 in pad of 2 oz copper.
Value
6
42
Unit
°C/W
°C/W
N-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
Dynamic
Qg *1
Qgs *1
Qgd *1
td(ON) *1
tr
*1
td(OFF) *1
tf *1
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *2
VSD *1
Min.
Typ.
Max.
Unit
Test Conditions
40
1.8
12
-
2.3
19
30
40
3.2
±100
1
25
35
50
V
V
S
nA
μA
μA
A
mΩ
mΩ
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VDS =5V, ID=10A
VGS=±20, VDS=0
VDS =32V, VGS =0
VDS =30V, VGS =0, Tj=125°C
VDS =5V, VGS =10V
VGS =10V, ID=10A
VGS =7V, ID=8A
-
9.1
2.3
3
2.5
7.5
12
4
796
84
59
-
nC
ID=15A, VDS=20V, VGS=10V
ns
VDS=10V, ID=1A, VGS=10V,
RG=6Ω
pF
VGS=0V, VDS=20V, f=1MHz
-
-
12
48
1.3
A
V
IF=IS, VGS=0V
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
MTC3504BJ4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 3/11
P-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
Dynamic
Qg *1
Qgs *1
Qgd *1
td(ON) *1
tr
*1
td(OFF) *1
tf *1
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *2
VSD *1
Min.
Typ.
Max.
Unit
Test Conditions
-40
-1.8
-9
-
-2.3
11
38
50
-3.2
±100
-1
-25
44
70
V
V
S
nA
μA
μA
A
mΩ
mΩ
VGS=0, ID=-250μA
VDS =VGS, ID=-250μA
VDS =-5V, ID=-8A
VGS=±20, VDS=0
VDS =-32V, VGS =0
VDS =-30V, VGS =0, Tj=125°C
VDS =-5V, VGS =-10V
VGS =-10V, ID=-8A
VGS =-7V, ID=-6A
-
11.5
2.5
3.2
7
10
20
12
1223
405
366
-
nC
ID=-10A, VDS=-20V, VGS=-10V
ns
VDS=-10V, ID=-1A, VGS=-10V,
RG=6Ω
pF
VGS=0V, VDS=-20V, f=1MHz
-
-
-9
-36
-1.3
A
V
IF=IS, VGS=0V
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTC3504BJ4
MTC3504BJ4
Package
TO-252
(RoHS compliant & Halogen-free package)
Shipping
Marking
2500 pcs / Tape & Reel
3504
CYStek Product Specification
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 4/11
CYStech Electronics Corp.
Characteristic Curves
N-Channel
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
2.4
50
VGS= 10V
40
RDS(ON) -Normalized
Drain-Source On-Resistance
6.0V
ID- Drain Current(A)
5.0 V
2.0
30
20
5.0V
4.0V
10
0
VGS = 3.5 V
2.2
8.0V 7.0V
3.5V
4
1
3
2
VDS- Drain Source Voltage(V)
0
1.8
6.0 V
1.6
7.0 V
1.4
8.0 V
1.2
10 V
1.0
0.8
5
0
10
50
0.09
ID = 10A
VGS = 10V
ID = 10 A
0.08
1.6
0.07
0.06
1.3
RDS(ON) - On-Resistance(Ω)
RDS(on) - Normalized
Drain-Source On-Resistance
40
On-Resistance Variation with Gate-to-Source Voltage
On-Resistance Variation with Temperature
1.9
1.0
0.7
0.4
-50
-25
0
25
50
75
TJ - Junction Temperature (°C)
100
125
0.05
TA = 125°C
0.04
TA = 25°C
0.03
0.02
0.01
150
2
100
VDS= 10V
Is - Reverse Drain Current(A)
TA = -55° C
20
25° C
15
125° C
5
0
1
MTC3504BJ4
8
10
V GS= 0V
25
10
4
6
VGS- Gate-to-Source Voltage(V)
Body Diode Forward Voltage Variation with
Source Current and Temperature
Transfer Characteristics
30
ID- Drain Current(A)
20
30
I D - Drain Current(A)
2
3
VGS- Gate-to-Source Voltage(V)
4
5
T A= 125° C
10
25° C
1
-55° C
0.1
0.01
0.001
0
0.2
0.6
0.8
1.0
0.4
VSD- Body Diode Forward Voltage(V)
1.2
1.4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 5/11
Characteristic Curves(Cont.)
Gate Charge Characteristics
Capacitance Characteristics
1200
10
f = 1MHz
VGS = 0 V
ID = 10A
VGS - Gate Source Voltage(V)
8
900
20V
VDS = 15V
Capacitance( pF )
6
4
2
600
300
Coss
0
12
16
0
Maximum Safe Operating Area
50
50 RDS(ON) Limit
100μs
1ms
10ms
100ms
10
DC
1s
10s
VGS= 10V
Single Pulse
RθJC= 6°C/ W
TC = 25°C
1
1
10
30
40
Single Pulse Maximum Power Dissipation
Single Pulse
RθJC = 6°C/ W
TC = 25°C
30
20
10
0
0.001
0
0
10
20
VDS - Drain-Source Voltage( V )
40
P(pk),Peak Transient Power(W)
80
Crss
0
4
8
Q g - Gate Charge(nC)
0
I D - Drain Current(A)
Ciss
40 50
0.01
VDS - Drain-Source Voltage(V)
0.1
1
10
t 1 ,Time (sec)
100
1000
Transient Thermal Response Curve
1
r(t),Normalized Effective
Transient Thermal Resistance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
PDM
0.01
t1
0.01
t2
1.Duty Cycle,D =
t1
t2
Single Pulse
2.RθJC =6°C/ W
3.TJ - TC = P * RθJC (t)
4.RθJC(t)=r(t) * RθJC
0.001
10
-4
MTC3504BJ4
10
-3
10
-2
-1
10
t 1 ,Time (sec)
1
10
100
1000
CYStek Product Specification
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 6/11
CYStech Electronics Corp.
Characteristic Curves(Cont.)
P-Channel
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
50
VGS = - 10.0V
2.5
VGS = - 3.5 V
- 8.0V
40
RDS(ON) -Normalized
Drain-Source On-Resistance
-ID- Drain Current(A)
- 7.0V
- 6.0V
30
20
- 5.0V
- 4.0V
10
- 3.5V
0
2
- 5.0 V
- 6.0 V
- 8.0 V
- 10.0 V
1
0.5
0
4
1
2
3
-VDS- Drain-to-Source Voltage(V)
0
5
10
On-Resistance Variation with Temperature
1.9
40
RDS(ON) - On-Resistance(Ω)
1.3
1.0
0.15
0.1
TA = 125°C
0.05
0.7
0.4
-50
50
ID = - 4.5A
VGS = - 10V
1.6
TA = 25°C
0
-25
75
0
25
50
TJ - Junction Temperature (°C)
100
125
2
150
Transfer Characteristics
30
VDS = - 10V
25
TA = -55°C
10
20
25°C
10
125°C
15
5
0
1.5
MTC3504BJ4
2.5
3.5
-VGS - Gate-Source Voltage( V )
4
6
- VGS- Gate-to-Source Voltage(V)
4.5
5.5
8
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
-Is - Reverse Drain Current(A)
RDS(on) - Normalized
Drain-Source On-Resistance
20
30
- ID - Drain Current(A)
On-Resistance Variation with Gate-to-Source Voltage
0.2
ID = -9 A
-ID - Drain Current( A )
- 7.0 V
1.5
VGS = 0V
TA = 125°C
1
25°C
0.1
-55°C
0.01
0.001
0
0.2
0.6
0.4
0.8
1.0
-VSD - Body Diode Forward Voltage(V)
1.2
1.4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 7/11
Characteristic Curves(Cont.)
Gate Charge Characteristics
Capacitance Characteristics
1500
10
f = 1 MHz
VGS = 0 V
1200
8
VDS = - 15V
6
- 20V
4
600
Coss
300
2
Crss
0
0
8
4
Qg - Gate Charge(nC)
0
12
Single Pulse
RθJC= 6°C/W
TC = 25°C
P(pk),Peak Transient Power(W)
40
RDS(ON) Limit
100μs
1ms
10ms
100ms
10
1s
10s
DC
VGS= -10V
Single Pulse
RθJC = 6°C/W
TC = 25°C
40
30
Single Pulse Maximum Power Dissipation
50
50
1
20
10
- VDS, Drain-Source Voltage(V)
0
16
Maximum Safe Operating Area
80
-ID - Drain Current(A)
Ciss
900
Capacitance(pF)
- VGS - Gate-to-Source Voltage(V)
ID = - 9A
30
20
10
0
0
0
1
10
-VDS - Drain-Source Voltage(V)
0.001
40 50
0.01
0.1
t 1 ,Time (sec)
1
10
100
Effective Transient Thermal Impedance
Normalized Thermal Response(Rthjc)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
PDM
t1
0.02
0.01
t2
1.Duty Cycle,D =
t1
t2
2.RθJC = 6°C/W
Single Pulse
3.TJ - TC = P* RθJC(t)
4.RθJC (t)=r(t) * RθJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t 1 , Pulse Width(ms)
MTC3504BJ4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 8/11
Reel Dimension
Carrier Tape Dimension
MTC3504BJ4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 9/11
Recommended soldering footprint
Unit : mm
MTC3504BJ4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 10/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC3504BJ4
CYStek Product Specification
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 11/11
CYStech Electronics Corp.
TO-252 Dimension
Marking:
Tab
Device Name
Date code
3504
□□□□
Style: Pin 1.Soure 1 2.Gate 1 3.&Tab
Drain 1& Drain 2 4. Source 2 5. Gate 2
4-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J4
Inches
Min.
Max.
0.0826 0.0984
0.0433 0.0512
0.0118 0.0276
0.0217 0.0295
0.0157 0.0315
0.157
0.0236
0.2087 0.2244
0.2638 0.2874
0.0866 0.1181
DIM
A
A1
B
B1
B2
C
D
D2
D3
Millimeters
Min.
Max.
2.10
2.50
1.10
1.30
0.30
0.70
0.55
0.75
0.40
0.80
0.40
0.60
5.30
5.70
6.70
7.30
2.20
3.00
DIM
E
E2
H
L
L1
L2
L3
P
Inches
Min.
Max.
0.2480 0.2638
0.1890 0.2146
0.3622 0.3996
0.0512 0.0669
0.0354 0.0590
0.0197 0.0433
0.0000 0.0118
0.0461 0.0539
Millimeters
Min.
Max.
6.30
6.70
4.80
5.45
9.20
10.15
1.30
1.70
0.90
1.50
0.50
1.10
0.00
0.30
1.17
1.37
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : KFC; Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC3504BJ4
CYStek Product Specification