CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN1308E3 BVDSS RDSON ID Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 1/6 75V 13 mΩ 80A Description The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN1308E3 G：Gate D：Drain S：Source MTN1308E3 TO-220 G D S CYStek Product Specification Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current Single Pulse Avalanche Energy @ L=0.5mH, ID=40 A, RG=25Ω Repetitive Avalanche Energy @ L=0.1mH (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1.Pulse width limited by maximum junction temperature. *2. Duty ≤ 1% Symbol Limits Unit VDS VGS ID ID IDM IAS EAS EAR 75 ±30 80 55 200 40 400 80 V V A A A A TL 300 °C TPKG 260 °C Pd 230 1.87 Tj, Tstg -55~+175 mJ W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN1308E3 Symbol Rth,j-c Rth,j-a Value 0.65 62.5 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 3/6 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Static BVDSS 75 VGS(th) 1.5 IGSS IDSS IDSS IDON 80 RDS(ON) GFS Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Rg Source-Drain Diode IS ISM VSD trr Qrr - Typ. Max. Unit Test Conditions 2.5 10.5 38 4.0 ±100 1 25 13 - V V nA μA μA A mΩ S VGS=0, ID=250μA VDS = VGS, ID=250μA VGS=±30 VDS =60V, VGS =0 VDS =50V, VGS =0, Tj=125°C VDS =10V, VGS=10V (Note 1) VGS =10V, ID=30A (Note 1) VDS =5V, ID=30A (Note 1) 42 19 17 25 200 100 120 10587 340 242 2 - 120 380 80 200 1.3 - nC VDS=80V, ID=30A, VGS=10V ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω (Note 1 & 2) pF Ω (Note 1 & 2) VGS=0V, VDS=25V, f=1MHz VGS=15mV, VDS=0V, f=1MHz A V ns nC (Note 3) IS=80A, VGS=0V (Note 1) VGS=0, IF=25A, dIF/dt=100A/μs Note : 1. Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2. Independent of operating temperature 3. Pulse width limited by maximum junction temperature. Ordering Information Device MTN1308E3 MTN1308E3 Package TO-220 (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 13N08 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 4/6 Characteristic Curves MTN1308E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 5/6 Characteristic Curves(Cont.) MTN1308E3 CYStek Product Specification Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 6/6 CYStech Electronics Corp. TO-220 Dimension A Marking: B D E C Device Name H K M I 13N08 □□□□ Date Code 3 G N 2 1 4 O P 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 DIM A B C D E G H Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN1308E3 CYStek Product Specification