CYSTEKEC MTN2300N3

Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date :
Page No. : 1/5
CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
MTN2300N3
Features
• VDS=20V
RDS(ON)[email protected]=4.5V, IDS=6A
RDS(ON)[email protected]=2.5V, IDS=5.2A
• Low on-resistance
• Capable of 2.5V gate drive
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
Equivalent Circuit
Outline
MTN2300N3
SOT-23
D
G:Gate
S:Source
D:Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
PD
Rth,ja
Tj, Tstg
Limits
20
±8
6
4.8
20
1.25
0.01
100
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on FR-4 board, t≤10sec.
MTN2300N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date :
Page No. : 2/5
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
Min.
Typ.
Max.
Unit
20
0.5
-
0.1
-
1.0
±100
1
25
28
38
V
V/°C
V
nA
μA
μA
-
550
120
80
8
6
19
7
10
3.6
2
-
-
0.7
1.3
mΩ
Test Conditions
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0
VDS=20V, VGS=0
VDS=16V, VGS=0, Tj=70°C
ID=6A, VGS=4.5V
ID=5.2A, VGS=2.5V
pF
VDS=15V, VGS=0, f=1MHz
ns
VDD=10V, ID=1A, VGS=4.5V, RG=0.2Ω
nC
VDS=10V, ID=6A, VGS=4.5V
V
VGS=0V, IS=1.25A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN2300N3
MTN2300N3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
2300
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date :
Page No. : 3/5
Characteristic Curves
MTN2300N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date :
Page No. : 4/5
Characteristic Curves(Cont.)
MTN2300N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date :
Page No. : 5/5
SOT-23 Dimension
Marking:
A
L
3
TE
2300
B
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
DIM
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034
0.0070
0.0128
0.0266
0.0335
0.0453
0.0830
0.1083
0.0098
0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2300N3
CYStek Product Specification