Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2300N3 Features • VDS=20V RDS(ON)=28mΩ@VGS=4.5V, IDS=6A RDS(ON)=38mΩ@VGS=2.5V, IDS=5.2A • Low on-resistance • Capable of 2.5V gate drive • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package Equivalent Circuit Outline MTN2300N3 SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃ Linear Derating Factor Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Symbol VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits 20 ±8 6 4.8 20 1.25 0.01 100 -55~+150 Unit V V A A A W W/°C °C/W °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board, t≤10sec. MTN2300N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 2/5 Electrical Characteristics (Ta=25°C) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *VSD Min. Typ. Max. Unit 20 0.5 - 0.1 - 1.0 ±100 1 25 28 38 V V/°C V nA μA μA - 550 120 80 8 6 19 7 10 3.6 2 - - 0.7 1.3 mΩ Test Conditions VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VDS=16V, VGS=0, Tj=70°C ID=6A, VGS=4.5V ID=5.2A, VGS=2.5V pF VDS=15V, VGS=0, f=1MHz ns VDD=10V, ID=1A, VGS=4.5V, RG=0.2Ω nC VDS=10V, ID=6A, VGS=4.5V V VGS=0V, IS=1.25A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN2300N3 MTN2300N3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 2300 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 3/5 Characteristic Curves MTN2300N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 4/5 Characteristic Curves(Cont.) MTN2300N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 5/5 SOT-23 Dimension Marking: A L 3 TE 2300 B S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2300N3 CYStek Product Specification