Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2009.02.09 Page No. : 1/ 7 CYStech Electronics Corp. 30V N-CHANNEL Enhancement Mode MOSFET MTN2306AN3 Features • VDS=30V RDS(ON)=35mΩ@VGS=4.5V, ID=5A RDS(ON)=50mΩ@VGS=2.5V, ID=2.6A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free package Equivalent Circuit Outline MTN2306AN3 SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃ Linear Derating Factor Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature Symbol VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits 30 ±12 5 4 20 1.38 0.01 90 -55~+150 Unit V V A A A W W/°C °C/W °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. MTN2306AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2009.02.09 Page No. : 2/ 7 Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS BVDSS/ΔTj VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr Min. Typ. Max. Unit 30 0.5 - 0.1 13 - 1.2 ±100 1 25 30 35 50 110 V V/°C V S nA μA μA - 660 90 70 6 20 20 3 8.5 1.5 3.2 1050 15 - - 14 7 1.2 - mΩ Test Conditions VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VDS=5V, ID=5A VGS=±12V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0, Tj=70°C VGS=10V, ID=5A VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1A pF VDS=25V, VGS=0, f=1MHz ns VDS=15V, ID=5A, VGS=10V, RG=3.3Ω, RD=3Ω nC VDS=16V, ID=5A, VGS=4.5V V ns nC VGS=0V, IS=1.2A IS=5A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN2306AN3 MTN2306AN3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 2306A CYStek Product Specification CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2009.02.09 Page No. : 3/ 7 Characteristic Curves MTN2306AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2009.02.09 Page No. : 4/ 7 Characteristic Curves(Cont.) MTN2306AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2009.02.09 Page No. : 5/ 7 Reel Dimension Carrier Tape Dimension MTN2306AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2009.02.09 Page No. : 6/ 7 Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. Recommended wave soldering condition Product Pb-free devices MTN2306AN3 Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds CYStek Product Specification CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2009.02.09 Page No. : 7/ 7 SOT-23 Dimension Marking: A L 3 B TE 2306A S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; tin plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2306AN3 CYStek Product Specification