CYSTEKEC MTN2306AN3

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2009.02.09
Page No. : 1/ 7
CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
MTN2306AN3
Features
• VDS=30V
RDS(ON)[email protected]=4.5V, ID=5A
RDS(ON)[email protected]=2.5V, ID=2.6A
• Low on-resistance
• Low gate charge
• Excellent thermal and electrical capabilities
• Pb-free package
Equivalent Circuit
Outline
MTN2306AN3
SOT-23
D
G:Gate
S:Source
D:Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient (Note 3)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
PD
Rth,ja
Tj, Tstg
Limits
30
±12
5
4
20
1.38
0.01
90
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.
MTN2306AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2009.02.09
Page No. : 2/ 7
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
BVDSS/ΔTj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
Min.
Typ.
Max.
Unit
30
0.5
-
0.1
13
-
1.2
±100
1
25
30
35
50
110
V
V/°C
V
S
nA
μA
μA
-
660
90
70
6
20
20
3
8.5
1.5
3.2
1050
15
-
-
14
7
1.2
-
mΩ
Test Conditions
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VDS=5V, ID=5A
VGS=±12V, VDS=0
VDS=30V, VGS=0
VDS=24V, VGS=0, Tj=70°C
VGS=10V, ID=5A
VGS=4.5V, ID=5A
VGS=2.5V, ID=2.6A
VGS=1.8V, ID=1A
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=15V, ID=5A, VGS=10V,
RG=3.3Ω, RD=3Ω
nC
VDS=16V, ID=5A, VGS=4.5V
V
ns
nC
VGS=0V, IS=1.2A
IS=5A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN2306AN3
MTN2306AN3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
2306A
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2009.02.09
Page No. : 3/ 7
Characteristic Curves
MTN2306AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2009.02.09
Page No. : 4/ 7
Characteristic Curves(Cont.)
MTN2306AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2009.02.09
Page No. : 5/ 7
Reel Dimension
Carrier Tape Dimension
MTN2306AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2009.02.09
Page No. : 6/ 7
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
Recommended wave soldering condition
Product
Pb-free devices
MTN2306AN3
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2009.02.09
Page No. : 7/ 7
SOT-23 Dimension
Marking:
A
L
3
B
TE
2306A
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
DIM
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034
0.0070
0.0128
0.0266
0.0335
0.0453
0.0830
0.1083
0.0098
0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; tin plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2306AN3
CYStek Product Specification