CYSTEKEC MTN351AN3

CYStech Electronics Corp.
Spec. No. : C410N3
Issued Date : 2007.06.28
Revised Date :
Page No. : 1/5
30V N-CHANNEL Enhancement Mode MOSFET
MTN351AN3
Features
• VDS=30V
RDS(ON)[email protected]=10V, ID=3A
RDS(ON)[email protected]=4.5V, ID=2A
• Lower gate charge
• Compact and low profile SOT-23 package
Equivalent Circuit
Outline
MTN351AN3
SOT-23
D
S
G:Gate
S:Source
D:Drain
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Rth, j-a
Tj, Tstg
Limits
30
±20
3 (Note 1)
10 (Note 2 & 3)
1.38
0.01
90 (Note 1)
-55 ~ +150
Unit
V
V
A
A
W
W/°C
°C/W
°C
Note : 1. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
2. Pulse width limited by maximum junction temperature
3. Pulse width≤300μs, duty cycle≤2%
MTN351AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C410N3
Issued Date : 2007.06.28
Revised Date :
Page No. : 2/5
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
Source-Drain Diode
*VSD
*trr
*Qrr
Min.
Typ.
Max.
Unit
30
1.0
-
0.1
13
2.5
±100
1
10
60
100
-
V
V/°C
V
nA
μA
μA
-
660
90
70
6
20
20
3
8.5
1.5
3.2
0.9
-
-
14
7
1.2
-
Test Conditions
S
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
VDS=24V, VGS=0, Tj=55°C
ID=3A, VGS=10V
ID=2A, VGS=4.5V
VDS=5V, ID=3A
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=15V, ID=3A, RD=3Ω
VGS=10V, RG=3.3Ω
nC
VDS=16V, ID=3A, VGS=4.5V
Ω
VGS=15mV, f=1MHz
V
ns
nC
VGS=0V, IS=1.2A
mΩ
IS=3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN351AN3
MTN351AN3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
351AN
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C410N3
Issued Date : 2007.06.28
Revised Date :
Page No. : 3/5
Characteristic Curves
MTN351AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C410N3
Issued Date : 2007.06.28
Revised Date :
Page No. : 4/5
Characteristic Curves(Cont.)
MTN351AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C410N3
Issued Date : 2007.06.28
Revised Date :
Page No. : 5/5
SOT-23 Dimension
Marking:
A
L
3
TE
351AN
B
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
DIM
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034
0.0070
0.0128
0.0266
0.0335
0.0453
0.0830
0.1083
0.0098
0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN351AN3
CYStek Product Specification