CYStech Electronics Corp. Spec. No. : C427N3-A Issued Date : 2008.05.30 Revised Date : 2008.07.01 Page No. : 1/7 30V N-CHANNEL Enhancement Mode MOSFET MTN3K16N3 Features • VDS=30V RDS(ON)<65mΩ@VGS=10V, ID=3.6A RDS(ON)<105mΩ@VGS=4.5V, ID=2.8A • Low on-resistance • High speed : ton=24ns(typ.), toff=19ns(typ.) • Pb-free package Equivalent Circuit Outline MTN3K16N3 SOT-23 D S G：Gate S：Source D：Drain G Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Rth, j-a Tj, Tstg Limits 30 ±20 3.6 (Note 1) 15 (Note 2 & 3) 1.4 0.01 90 (Note 1) -55 ~ +150 Unit V V A A W W/°C °C/W °C Note : 1. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad 2. Pulse width limited by maximum junction temperature 3. Pulse width≤300μs, duty cycle≤2% MTN3K16N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C427N3-A Issued Date : 2008.05.30 Revised Date : 2008.07.01 Page No. : 2/7 Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS ID(ON) *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg Source-Drain Diode *VSD Min. Typ. Max. Unit 30 1.0 15 - 7 3.0 ±100 1 10 65 105 - V V nA μA μA A - 460 62 106 24 15 19 6 5.0 - - - 1.2 Test Conditions S VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0, Tj=55°C VGS=10V, VDS=5V ID=3.6A, VGS=10V ID=2.8A, VGS=4.5V VDS=5V, ID=3.6A pF VDS=15V, VGS=0, f=1MHz ns VDS=15V, ID=2A, VGS=4V, RG=10Ω nC VDS=24V, ID=4A, VGS=4V V VGS=0V, IS=1.2A mΩ *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN3K16N3 MTN3K16N3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 3K16 CYStek Product Specification Spec. No. : C427N3-A Issued Date : 2008.05.30 Revised Date : 2008.07.01 Page No. : 3/7 CYStech Electronics Corp. 10000 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 10V 4.5V Common Source Ta=25℃ 4V 3.5V Ta=100℃ 1000 100 3.3V ID(mA) ID (A) Characteristic Curves 3V 25℃ 1 2.8V V DS=5V Common Source 0.1 VGS=2.6 V 0 0.5 1 VDS (V) 1.5 0.01 2 0 1 2 3 VGS(V) 4 Fig 2. Transfer Characteristics Fig 1. Typical Output Characteristics 70 100 90 Common Source Ta =25 ℃ 60 80 VGS=4 V 50 40 RDS(ON) (mΩ) RDS(ON) (mΩ) -25℃ 10 4.5V 30 10V ID =2A Common Source V GS=4V 70 60 4.5V 50 40 10V 30 20 20 10 10 0 2 4 6 8 10 ID (A) 12 14 0 -25 16 25 50 75 100 125 150 TA(℃ ) Fig 3. On-Resistance vs. Drain Current and Gate Voltage Fig 4. On-Resistance vs Ambient Temperature 3 200 Common Source ID=2A 160 2.5 V DS =5V ID=0.1mA Common Source 2 120 Vth(V) RDS(ON) (mΩ) 0 Ta=100℃ 80 25℃ 1.5 1 40 0.5 -25℃ 0 0 2 4 6 8 VGS (V) Fig 5. On-Resistance vs. Gate-Source Voltage MTN3K16N3 10 0 -25 0 25 50 75 100 125 150 T A (℃ ) Fig 6. Gate Threshold Voltage vs Ambient Temperature CYStek Product Specification CYStech Electronics Corp. Spec. No. : C427N3-A Issued Date : 2008.05.30 Revised Date : 2008.07.01 Page No. : 4/7 Characteristic Curves(Cont.) MTN3K16N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C427N3-A Issued Date : 2008.05.30 Revised Date : 2008.07.01 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTN3K16N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C427N3-A Issued Date : 2008.05.30 Revised Date : 2008.07.01 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN3K16N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C427N3-A Issued Date : 2008.05.30 Revised Date : 2008.07.01 Page No. : 7/7 SOT-23 Dimension Marking: A L 3 B TE 3K16 S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3K16N3 CYStek Product Specification