CYSTEKEC MTN3K16N3

CYStech Electronics Corp.
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 1/7
30V N-CHANNEL Enhancement Mode MOSFET
MTN3K16N3
Features
• VDS=30V
RDS(ON)<[email protected]=10V, ID=3.6A
RDS(ON)<[email protected]=4.5V, ID=2.8A
• Low on-resistance
• High speed : ton=24ns(typ.), toff=19ns(typ.)
• Pb-free package
Equivalent Circuit
Outline
MTN3K16N3
SOT-23
D
S
G:Gate
S:Source
D:Drain
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Rth, j-a
Tj, Tstg
Limits
30
±20
3.6 (Note 1)
15 (Note 2 & 3)
1.4
0.01
90 (Note 1)
-55 ~ +150
Unit
V
V
A
A
W
W/°C
°C/W
°C
Note : 1. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
2. Pulse width limited by maximum junction temperature
3. Pulse width≤300μs, duty cycle≤2%
MTN3K16N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 2/7
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
Source-Drain Diode
*VSD
Min.
Typ.
Max.
Unit
30
1.0
15
-
7
3.0
±100
1
10
65
105
-
V
V
nA
μA
μA
A
-
460
62
106
24
15
19
6
5.0
-
-
-
1.2
Test Conditions
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
VDS=24V, VGS=0, Tj=55°C
VGS=10V, VDS=5V
ID=3.6A, VGS=10V
ID=2.8A, VGS=4.5V
VDS=5V, ID=3.6A
pF
VDS=15V, VGS=0, f=1MHz
ns
VDS=15V, ID=2A,
VGS=4V, RG=10Ω
nC
VDS=24V, ID=4A, VGS=4V
V
VGS=0V, IS=1.2A
mΩ
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN3K16N3
MTN3K16N3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
3K16
CYStek Product Specification
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 3/7
CYStech Electronics Corp.
10000
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
10V
4.5V
Common Source
Ta=25℃
4V
3.5V
Ta=100℃
1000
100
3.3V
ID(mA)
ID (A)
Characteristic Curves
3V
25℃
1
2.8V
V DS=5V
Common Source
0.1
VGS=2.6
V
0
0.5
1
VDS (V)
1.5
0.01
2
0
1
2
3
VGS(V)
4
Fig 2. Transfer Characteristics
Fig 1. Typical Output Characteristics
70
100
90
Common Source
Ta =25 ℃
60
80
VGS=4
V
50
40
RDS(ON) (mΩ)
RDS(ON) (mΩ)
-25℃
10
4.5V
30
10V
ID =2A
Common Source
V GS=4V
70
60
4.5V
50
40
10V
30
20
20
10
10
0
2
4
6
8
10
ID (A)
12
14
0
-25
16
25
50
75
100
125
150
TA(℃ )
Fig 3. On-Resistance vs. Drain Current and
Gate Voltage
Fig 4. On-Resistance vs Ambient Temperature
3
200
Common Source
ID=2A
160
2.5
V DS =5V
ID=0.1mA
Common Source
2
120
Vth(V)
RDS(ON) (mΩ)
0
Ta=100℃
80
25℃
1.5
1
40
0.5
-25℃
0
0
2
4
6
8
VGS (V)
Fig 5. On-Resistance vs. Gate-Source Voltage
MTN3K16N3
10
0
-25
0
25
50
75
100
125
150
T A (℃ )
Fig 6. Gate Threshold Voltage vs Ambient Temperature
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 4/7
Characteristic Curves(Cont.)
MTN3K16N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTN3K16N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3K16N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 7/7
SOT-23 Dimension
Marking:
A
L
3
B
TE
3K16
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
DIM
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034
0.0070
0.0128
0.0266
0.0335
0.0453
0.0830
0.1083
0.0098
0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3K16N3
CYStek Product Specification