CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN50N06E3 Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 1/8 BVDSS 60V RDSON(MAX) 22 mΩ ID 50A Description The MTN50N06E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN50N06E3 G：Gate D：Drain S：Source MTN50N06E3 TO-220 G D S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dV/dt (Note 3) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds VDS VGS ID ID IDM IAR EAS EAR dV/dt Pd V V A A A A Tj, Tstg 60 ±20 50 35 200 50 500 12 4.5 120 0.8 -55~+175 V/ns W W/°C °C TL 300 °C mJ Note : *1. Pulse width limited by maximum junction temperature. *2. L=200μH, IAS=50A,VDD=30V, starting TJ=+25℃ *3. ISD≤50A, dI/dt<100A/μs, VDD≤BVDSS, TJ≤Tj(max). Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN50N06E3 Symbol Rth,j-c Rth,j-a Value 1.24 62.5 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 3/8 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Static BVDSS 60 VGS(th) 2.0 IGSS IDSS IDSS IDON 50 RDS(ON) GFS Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Source-Drain Diode IS ISM VSD trr Qrr - Typ. Max. Unit Test Conditions 2.8 19 28 4.0 ±100 5 25 22 - V V nA μA μA A mΩ S VGS=0, ID=250μA VDS = VGS, ID=250μA VGS=±20 VDS =60V, VGS =0 VDS =48V, VGS =0, Tj=125°C VDS =10V, VGS=10V (Note 1) VGS =10V, ID=30A (Note 1) VDS =10V, ID=25A (Note 1) 52 75 nC VDS=80V, ID=30A, VGS=10V ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω (Note 1 & 2) pF 50 200 1.5 - (Note 1 & 2) VGS=0V, VDS=25V, f=1MHz A V ns nC (Note 3) IS=25A, VGS=0V (Note 1) VGS=0, IF=50A, dIF/dt=100A/μs Note : 1. Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2. Independent of operating temperature 3. Pulse width limited by maximum junction temperature. Ordering Information Device MTN50N06E3 MTN50N06E3 Package TO-220 (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 50N06 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 4/8 Characteristic Curves MTN50N06E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 5/8 Characteristic Curves(Cont.) MTN50N06E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 6/8 Test Circuit and Waveforms MTN50N06E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 7/8 Test Circuit and Waveforms(Cont.) MTN50N06E3 CYStek Product Specification Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-220 Dimension A Marking: B D E C Device Name H K M I 50N06 □□□□ Date Code 3 G N 2 1 4 O P 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 DIM A B C D E G H Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN50N06E3 CYStek Product Specification