CYSTEKEC MTN7002ZHN3

CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2008.07.24
Page No. : 1/7
N-CHANNEL MOSFET
MTN7002ZHN3
Description
The MTN7002ZHN3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive(2.5V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Symbol
Outline
MTN7002ZHN3
D
SOT-23
D
G
S
MTN7002ZHN3
G:Gate
S:Source
D:Drain
G
S
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2008.07.24
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Symbol
VDSS
Limits
60
±20
115
700
*1
115
700
*1
200
*2
1250
*3
+150
-55~+150
VGSS
ID
IDP
IDR
IDRP
PD
Continuous
Pulsed
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
TCH
Tstg
Unit
V
V
mA
mA
mA
mA
mW
V
°C
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVDSS*
60
VGS(th)
1
2.5
IGSS
±10
IDSS
1
3.6
5.5
RDS(ON)*
3
5
GFS
100
Ciss
7.32
Coss
3.42
Crss
7.63
-
Unit
V
V
μA
μA
mS
Test Conditions
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=60V, VGS=0
ID=100mA, VGS=5V
ID=100mA, VGS=10V
VDS=10V, ID=100mA
pF
VDS=10V, VGS=0, f=1MHz
Ω
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
MTN7002ZHN3
MTN7002ZHN3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
702
CYStek Product Specification
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2008.07.24
Page No. : 3/7
CYStech Electronics Corp.
Characteristic Curves
Typical Output Characteristics
Typical Transfer Characteristics
0.3
0.3
4V
6V
0.2
0.15
VDS=10V
0.25
3.5V
Drain Current -ID(A)
Drain Current - ID(A)
0.25
3V
0.1
0.2
0.15
0.1
0.05
0.05
VGS=2.2V
0
0
0
1
2
3
Drain-Source Voltage -VDS(V)
0
4
4
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
10
10
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
VGS=5V
VGS=10V
1
1
0.01
0.1
Drain Current-ID(A)
0.01
1
0.1
1
Drain Current-ID(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Reverse Drain Current vs Source-Drain Voltage
7
10
Source-Drain Voltage-VSD(V)
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
1
2
3
Gate-Source Voltage-VGS(V)
6
5
4
ID=100mA
3
ID=50mA
2
1
1
0.1
0.01
0.001
0
0
MTN7002ZHN3
5
10
15
20
Gate-Source Voltage-VGS(V)
25
0
0.2
0.4
0.6
0.8
Reverse Drain Current -IDR(A)
1
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2008.07.24
Page No. : 4/7
Characteristic Curves(Cont.)
Power Derating Curve
Capacitance vs Drain-to-Source Voltage
250
10
Power Dissipation---PD(mW)
Capacitance---(pF)
100
Crss
Ciss
200
150
100
50
C oss
0
1
0.1
1
10
Drain-Source Voltage -VDS(V)
100
0
50
100
150
Ambient Temperature---TA(℃)
200
Moisture Sensitivity Level : conform to JEDEC level 1
Recommended Storage Condition:
Temperature : ≤ 30 °C
Humidity : ≤ 85% RH
MTN7002ZHN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2008.07.24
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTN7002ZHN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2008.07.24
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN7002ZHN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2008.07.24
Page No. : 7/7
SOT-23 Dimension
Marking:
A
L
3
B
702
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
J
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7002ZHN3
CYStek Product Specification