CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN75N75HE3 BVDSS RDSON ID Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 1/6 75V 11 mΩ 80A Description The MTN75N75HE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • High Density Cell Design for Ultra Low On-Resistance • Simple Drive Requirement • High Power and Current Handling Capability • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN75N75HE3 G：Gate D：Drain S：Source MTN75N75HE3 TO-220 G D S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 2/6 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Current Single Pulse Avalanche Energy @ L=0.5mH, IAS=57 A, RG=25Ω,VDD=25V Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Note : *1.Pulse width limited by safe operating area Symbol Limits Unit VDS VGS ID ID IDM IAS 75 ±20 80 56 300 57 V V A A A A EAS 800 mJ Pd 137 1.09 -55~+150 W W/°C °C Tj, Tstg Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN75N75HE3 Symbol Rth,j-c Rth,j-a Value 0.91 62.5 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 3/6 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS 75 VGS(th) 2.0 IGSS IDSS IDSS IDON 80 RDS(ON) GFS Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Source-Drain Diode IS VSD trr Qrr - Typ. Max. Unit Test Conditions 2.7 9.5 72 4.0 ±100 1 5 11 - V V nA μA μA A mΩ S VGS=0, ID=250μA VDS = VGS, ID=250μA VGS=±20 VDS =75V, VGS =0 VDS =60V, VGS =0, Tj=55°C VDS =10V, VGS=10V (Note 1) VGS =10V, ID=40A (Note 1) VDS =15V, ID=40A (Note 1) 117 27 47 25 100 66 30 3457 771 170 - 53 143 80 1.5 - nC VDS=80V, ID=60A, VGS=10V ns VDS=37.5V, ID=45A, VGS=10V, RGS=4.7Ω (Note 1 & 2) pF A V ns nC (Note 1 & 2) VGS=0V, VDS=25V, f=1MHz VD=VG=0V, VS=1.5V IS=75A, VGS=0V (Note 3) (Note 1) VGS=0, IS=30A, dIF/dt=100A/μs Note : 1. Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2. Independent of operating temperature 3. Pulse width limited by maximum junction temperature. Ordering Information Device MTN75N75HE3 MTN75N75HE3 Package TO-220 (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 75N75H CYStek Product Specification CYStech Electronics Corp. Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 4/6 Characteristic Curves MTN75N75HE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 5/6 Characteristic Curves(Cont.) MTN75N75HE3 CYStek Product Specification Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 6/6 CYStech Electronics Corp. TO-220 Dimension A Marking: B D E C Device Name H K M I 75N75H □□□□ Date Code 3 G N 2 1 4 O P 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 DIM A B C D E G H Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN75N75HE3 CYStek Product Specification