DAESAN BAT54H

Surface Mount Schottky
Barrier Diode
BAT54H
Features
PACKAGE DIMENSIONS
SOD-323
PLASTIC PACKAGE
Low Turn-on Voltage
Extremely Fast Switching Speed
PN Junction Guard Ring for Transient and
ESD Protection
K
A
Mechanical Data
Case: Molded Plastic
Polarity: See Diagrams Below
Mounting Position : Any
Low Forward Voltage : 0.35 Volts (Typ) @ IF = 10 mAdc
Shipping : 3000 / Tape & Reel
1
2
THERMAL
Reverse Voltage
R JA
T J , Tstg
Characteristic
Value
Unit
30
V
Max
Unit
Total Device Dissipation FR –5 Board,*
T A = 25 o C
o
Derate above 25 C
200
mW
1.57
o
mW/ C
Thermal Resistance Junction to Ambient
635
Junction and Storage Temperature
150
*FR FR-4Minimum
–4
Pad
ELECTRICAL
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS.
3.LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
CHARACTERISTICS
Symbol
PD
H
J
R ATING S (T J = 125 5C unless otherwise noted)
Rating
CHARACTERISTICS
Reverse Breakdown Voltage (I R = 10
O
DIM
A
B
C
D
E
H
J
K
C/W
o
C
o
(T A = 25 C unless otherwise noted)
Characteristic
A)
B
2
C
NOTE 3
Symbol
VR
2
ANODE
1
E
BA T 54 H M ar king : JV
PIN 1. CATHODE
2. ANODE
MAXIMUM
1
CATHODE
D
Symbol
Min
V (BR)R
30
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.60
1.80
0.063
0.071
1.15
1.35
0.045
0.053
0.80
1.00
0.031
0.039
0.25
0.40
0.010
0.016
0.15 REF
0.006 REF
0.00
0.10
0.000
0.004
0.089
0.177 0.0035 0.0070
2.30
2.70
0.091
0.106
Ty p
Max
Unit
Volts
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
CT
7.6
10
pF
Reverse Leakage (V R = 25 V)
IR
0.5
2.0
Adc
Forward Voltage (I F = 0.1 mAdc)
VF
0.22
0.24
Vdc
Forward Voltage (I F = 30 mAdc)
VF
0.41
0.5
Vdc
Forward Voltage (I F = 100 mAdc)
VF
0.52
1.0
Vdc
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1
trr
5.0
ns
Forward Voltage (I F = 1.0 mAdc)
VF
0.29
0.32
Vdc
Forward Voltage (I F = 10 mAdc)
VF
0.35
0.40
Vdc
Forward Current (DC)
IF
200
mAdc
Repetitive Peak Forward Current
I FRM
300
mAdc
Non-RepetitivePeak Forward Current (t < 1.0 s)
I FSM
600
mAdc
RATINGS AND CHARACTERISTIC CURVES BAT54H
820
+10 V
2k
100
H
0.1
IF
F
tr
tp
IF
t
trr
10%
0.1 F
DUT
Output
Pulse
G enerator
50
90%
50 Input
Sampling
O scilloscope
IR(REC ) = 1 mA
IR
VR
t
O utput Pulse
(I F = I R = 10 mA; measured
at IR(REC) = 1 mA)
Input Signal
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I F ) of 10 mA.
Notes: 2. Input pulse is adjusted so I R(peak ) is equal to 10 mA.
Notes: 3. t p t rr
Figure 1. Recovery
Time Equivalent
100
Test Circuit
1000
O
T A = 150 C
o
12 5 C
1.0
o
85 C
0.1
I R , R everse Current (mA)
o
15 0 C
10
0.0
0.1
25 C
o
0.2
-40 o C
0.3
0.4
T A = 125 O C
10
1.0
T A = 85 O C
0.1
0.01
O
-5 5 C
0.5
0.001
0.6
T A = 25 O C
0
5 1
V F, F orward Voltage (V)
Figure 2. Forward Voltag e
0
15
20
V R , R everse Voltage (V )
Figure 3. Leakage Current
14
12
C T , Total C apacitance (pF)
I F , F orward C urrent (mA)
100
10
8
6
4
2
0
0
5 1
0
15
20
V R , R everse Voltage (V )
Figure 4. Total Capacitance
25
30
25
30