TO-92L Plastic-Encapsulate Transistors 2SA684 TRANSISTOR (PNP) TO-92L FEATURES 1. EMITTER ∙ Automatic insertion by radial taping possible. 2. COLLECTOR · Complementary pair with 2SC1384. 3. BASE 123 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Test unless otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10uA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V ICBO VCB=-20V, IE=0 hFE(1) VCE=-10V, IC=-500mA 85 hFE(2) VCE=-5V, IC=-1A 50 Collector cut-off current DC current gain -0.1 μA 340 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.2 -0.4 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -0.85 -1.2 V fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range Cob VCE=-10V, IE=50mA, f=200MHz 200 VCB=-10V, IE=0, f=1MHz 20 MHz 30 hFE(1) Q R S 85-170 120-240 170-340 pF Typical Characteristics 2SA684