DB-3, DB-4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within four volts with a typical breakover voltage of DB-3 32 V, DB-4 40 V. These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls. Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black XXX Max. 3.9 Min. 27.5 TS - 40 OC to +150 OC Storage Temperature Range Operating Temperature Range TJ - 40 OC to +100 OC Glass Case DO-35 Dimensions in mm MAXIMUM RATINGS at 50 OC Ambient Peak Current (10 µs duration, 120 cycle repetition rate) IP ± 2 A Max. Peak output voltage eP 3 ± Volts Max.1) Characteristics at Ta = 25 OC Parameter Symbol DB-3 Breakover Voltage DB-4 V(BR)1 and V(BR)2 Min. Max. 28 36 35 45 Unit V Breakover Currents I(BR)1 and I(BR)2 - 200 µA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V Dynamic Breakover Voltage ΔI = [IBR to IF = 10 mA] | ΔV ± | 5 - V RθJA - 60 Thermal Impedance Junction to Ambient Air DIAC load up to 1500 W 3.3 K 60~ 120 V 1) 0.1 uF 20 ep CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 120 VAC 60 Hz TRIAC 200 K 0.1 u F 100 V BILATERAL TRIGGER DIAC TYPICAL DIAC-TRIAC FULL-WAVE PHASE CONTROL CIRCUIT C/W O