DAYA M8050

SOT-23
M8050
Plastic-Encapsulate Transistors
SOT-23
TRANSISTOR (NPN)
FEATURES
Power dissipation
1. BASE
2. EMITTER
MARKING: Y11
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.8
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC=1mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 35V, IE=0
0.1
μA
Collector cut-off
ICEO
VCE= 20V, IB=0
0.1
μA
hFE(1)
VCE=1V, IC=5mA
45
hFE(2)
VCE=1V, IC=100mA
80
hFE(3)
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC= 800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80mA
1.2
V
current
DC current gain
fT
Transition frequency
VCE=6V, IC= 20mA , f=30MHz
300
150
MHz
* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.
CLASSIFICATION OF
Rank
Range
hFE(2)
L
H
80-200
200-300