DAYA MMBT3906

SOT-23 Plastic-Encapsulate Transistors
MMBT3906
SOT-23
TRANSISTOR (PNP)
FEATURES
z
1. BASE
As complementary type, the NPN transistor
2. EMITTER
MMBT3904 is Recommended
3. COLLECTOR
Epitaxial planar die construction
z
MARKING: 2A
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
Collector Current -Continuous
-5
V
IC
-0.2
A
PC
Collector Power Dissipation
0.3
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= -10μA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -40V, E=0
-0.1
μA
Collector cut-off current
ICEX
VCE=-30V,VBE(off)=-3V
-50
nA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
hFE(1)
VCE=-1V, IC=-10mA
100
hFE(2)
VCE= -1V, IC=-50mA
60
hFE(3)
VCE= -1V, IC=-100mA
30
DC current gain
300
Collector-emitter saturation voltage
VCE(sat)
IC=-50mA, IB=-5mA
-0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=- 50mA, IB=- 5mA
-0.95
V
Transition frequency
fT
VCE=-20V, IC=-10mA, f=100MHz
Delay Time
td
Rise Time
tr
VCC=-3.0V,VBE=-0.5V
IC=-10mA,IB1=-1.0mA
Storage Time
ts
Fall Time
tf
250
VCC=-3.0V,IC=-10mA
IB1=IB2=-1.0mA
CLASSIFICATION OF hFE1
Rank
Range
O
Y
100-200
200-300
MHz
35
nS
35
nS
225
nS
75
nS
Typical Characteristics
MMBT3906