DC COMPONENTS CO., LTD. 2N3055 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 Pinning 1 = Base 2 = Emitter Case = Collector 1.573 Max (39.96) .875(22.23) .759(19.28) .135 Max (3.43) .450(11.43) .250(6.35) .480(12.19) .440(11.18) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Symbol Rating VCBO 100 V VCEO 60 V VCEV 70 V VEBO 7 V Collector Current IC 15 A Base Current IB 7 A Total Power Dissipation(TC=25 C) PD 115 W Junction Temperature TJ +200 Collector-Emitter Voltage Emitter-Base Voltage o Storage Temperature TSTG -65 to +200 .043(1.09) .038(0.97) Unit 1.197(30.40) 1.177(29.90) .681(17.30) .655(16.64) .169(4.30) .151(3.84) .169(4.30) .151(3.84) 2 .440(11.18) 1.050(26.67) .420(10.67) 1.011(25.68) .225(5.72) .205(5.20) 1 Case: Collector o C Dimensions in inches and (millimeters) o C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Collector-Emitter Sustaining Volatge Symbol Min Typ Max Unit VCEO(sus) 60 - - V VCER(sus) 70 - - V ICEO - - 0.7 mA Collector Cutoff Current ICEX Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage Test Conditions IC=0.2A, IB=0 IC=0.2A, RBE=100Ω VCE=30V, IB=0 - - 1 mA VCE=100V, VBE(off)=1.5V - - 5 mA VCE=100V, VBE(off)=1.5V, TC=150 C IEBO - - 5 mA VCE(sat)1 - - 1.1 V o VBE=7V, IC=0 IC=4A, IB=0.4A VCE(sat)2 - - 3 V IC=10A, IB=3.3A VBE(on) - - 1.5 V IC=4A, VCE=4V (1) hFE1 20 - 70 - IC=4A, VCE=4V hFE2 5 - - - IC=10A, VCE=4V Is/b 2.87 - - A VCE=40V, t=1.0s, Non-repetitive Current Gain - Bandwidth Product fT 2.5 - - MHz Small-Signal Current Gain hfe 15 - 120 - IC=10A, VCE=4V, f=1KHz Small-Signal Current Gain Cutoff Frequency fhfe 10 - - KHz IC=1A, VCE=4V, f=1KHz (1)Pulse Test: Pulse Width 2% DC Current Gain(1) Second Breakdown Collector with Base Forward Bias 300µs, Duty Cycle IC=0.5A, VCE=10V, f=1MHz