DC COMPONENTS CO., LTD. BC807 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in drive and output stages of audio amplifiers. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating VCES -50 V VCEO -45 V VEBO -5 V Collector Current IC -500 mA Total Power Dissipation PD 225 mW Collector-Emitter Voltage Emitter-Base Voltage .091(2.30) .067(1.70) Unit Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage (1) Base-Emitter On Voltage DC Current Gain (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Symbol Min Typ Max Unit BVCES -50 - - V Test Conditions BVCEO -45 - - V IC=-10mA BVEBO -5 - - V IE=-1µA ICBO - - -0.1 µA VCB=-20V IC=-10µA IEBO - - -0.1 µA VEB=-4V VCE(sat) - - -0.7 V IC=-500mA, IB=-50mA VBE(on) - - -1.2 V IC=-300mA, VCE=-1V hFE 100 - 630 - IC=-100mA, VCE=-1V fT - 100 - MHz - - 12 pF Cob 380µs, Duty Cycle 2% Classification of hFE Rank 16 25 40 Range 100~250 160~400 250~630 IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz, IE=0