DC COMPONENTS CO., LTD. BC848 BC849 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 30 - - V Collector-Emitter Breakdown Volatge BVCEO 30 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 ICBO - - 15 nA VCB=30V, IE=0 Collector Cutoff Current (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) BC848 BC849 Test Conditions IC=100µA, IE=0 VCE(sat)1 - - 0.25 V IC=10mA, IB=0.5mA VCE(sat)2 - 0.2 0.6 V IC=100mA, IB=5mA VBE(sat)1 - 0.7 - V IC=10mA, IB=0.5mA VBE(sat)2 - 0.9 - V IC=100mA, IB=5mA VBE(on) 0.58 - 0.7 V IC=2mA, VCE=5V - IC=2mA, VCE=5V hFE 110 - 800 200 - 800 Transition Frequency fT 100 - - MHz Output Capacitance Cob - 3.5 6 pF VCB=10V, f=1MHz - - 10 - - 4 dB VCE=5V, IC=200µA, f=1KHz, RS=2KΩ, B=200Hz BC848 Noise Figure (1)Pulse Test: Pulse Width NF BC849 380µs, Duty Cycle 2% Classification of hFE Rank A B C Range 110~220 200~450 420~800 IC=10mA, VCE=5V, f=100MHz