DC COMPONENTS CO., LTD. TIP41C DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. TO-220AB Pinning .405(10.28) .380(9.66) 1 = Base 2 = Collector 3 = Emitter .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) .625(15.87) .570(14.48) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Collector Current IC 6 A Total Power Dissipation(TC=25 C) PD 65 W Total Power Dissipation PD 2 Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o o .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) W .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 100 - - V Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=30mA, IB=0 ICES - - 400 µA VCE=100V, IB=0 Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) (1) Transition Frequency (1)Pulse Test: Pulse Width ICEO - - 700 µA VCE=60V, IB=0 IEBO - - 1 mA VEB=5V, IC=0 VCE(sat) - - 1.5 V Rank A B Range 15~50 40~75 IC=6A, IB=0.6A VBE(on) - - 2 V IC=6A, VCE=4V hFE1 30 - - - IC=0.3A, VCE=4V hFE2 15 - 75 - fT 3 - - MHz 380µs, Duty Cycle Classification of hFE2 Test Conditions IC=1mA, IE=0 2% IC=3A, VCE=4V IC=0.5A, VCE=10V, f=1MHz