DCR1375SBA28 Phase Control Thyristor DS4654-5.1 MAY 2005 (LN23955) Replaces July 2001 version DS4654-5.0 FEATURES • Double Side Cooling • High Surge Capability • Low Turn-on Losses KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 2800V 2004A 35000A 1000V/µs 500A/µs APPLICATIONS • High Voltage Power Converters • DC Motor Control • High Voltage Power Supplies VOLTAGE RATINGS Part and Ordering Number DCR1375SBA28 DCR1375SBA27 DCR1375SBA26 DCR1375SBA25 DCR1375SBA24 Repetitive Peak Voltages VDRM and VRRM V 2800 2700 2600 2500 2400 Conditions Tvj = 0° C to 125° C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. Outline type code: L (See Package Details for further information) Fig. 1 Package outline For example: DCR1375SBA28 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/9 www.dynexsemi.com DCR1375SBA28 SEMICONDUCTOR CURRENT RATINGS Tcase = 60° C unless stated otherwise Parameter Symbol Test Conditions Max. Units 2004 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 3148 A Continuous (direct) on-state current - 2846 A 1491 A IT Half wave resistive load Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 2342 A Continuous (direct) on-state current - 2009 A Test Conditions Max. Units 1575 A IT Half wave resistive load Tcase = 80° C unless stated otherwise Symbol Parameter Double Side Cooled IT(AV IT(RMS) IT Mean on-state current Half wave resistive load RMS value - 2475 A Continuous (direct) on-state current - 2200 A 1150 A Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 1805 A Continuous (direct) on-state current - 1520 A IT Half wave resistive load 2/9 www.dynexsemi.com DCR1375SBA28 SEMICONDUCTOR SURGE RATINGS Parameter Symbol ITSM 2 It ITSM 2 It Surge (non-repetitive) on-state current 2 I t for fusing Surge ( non-repetitive) on-state current 2 I t for fusing Test Conditions Max. Units 10ms half sine, Tcase = 125° C 28 kA VR = 50%VRRM - ¼ Sine 3.92×10 6 35 10ms half sine, Tcase = 125° C VR = 0 6.125×10 2 As kA 6 2 As THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Min. Max. Units Double side cooled DC - 0.013 ° C/W Single side cooled Anode DC - 0.021 ° C/W Cathode DC - 0.034 ° C/W Clamping force 40.0kN Double side - 0.003 ° C/W (with mounting compound) Single side - 0.006 ° C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 36 44 kN 3/9 www.dynexsemi.com DCR1375SBA28 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125° C - 150 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125° C, gate open - 1000 V/µs dI/dt Rate of rise of on-state current From 80% VDRM Repetitive 50Hz - 250 A/µs Gate source 20V, 20Ω, Non-repetitive - 500 A/µs tr < 1.0µs, Tj = 125° C VT(TO) rT tgd Threshold voltage – Low level At Tvj = 125° C - 1.02 V On-state slope resistance – Low level At Tvj = 125° C - 0.259 mΩ VD = 67% VDRM, gate source 30V, 15Ω - 2 µs Delay time tr = 0.5µs, Tj = 25° C tq Turn-off time IT = 800A, tp = 1 ms, Tj = 125° C, VR = 50V, dI/dt = 20A/µs, VDR = 67% VDRM 400 µs dVDR/dt = 20V/µs linear QS Stored charge IT = 800A, Tj = 125° C, dI/dt – 1A/µs, - 1500 µC IL Latching current Tj = 25° C, VD = 5V - 500 mA IH Holding current Tj = 25° C, RG-K = ∞ - 260 mA 4/9 www.dynexsemi.com DCR1375SBA28 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units 3 V VGT Gate trigger voltage VDRM = 5V, Tcase = 25° C VGD Gate non-trigger voltage At VDRM, Tcase = 125° C 0.25 V IGT Gate trigger current VDRM = 5V, Tcase = 25° C 350 mA 30 V 0.25 V 5 V Anode positive with respect to cathode Anode negative with respect to cathode VFGM Peak forward gate voltage VFGN Peak forward gate voltage VRGM Peak forward gate voltage IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig. 5 150 W PG(AV) Mean gate power 10 W - - CURVES Fig.2 Maximum (limit) on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.√IT Where A = 1.149986 B = -0.09990939 -5 C = 7.993598×10 D = 0.02290949 these values are valid for Tj = 125° C for IT 500A to 6500A 5/9 www.dynexsemi.com DCR1375SBA28 SEMICONDUCTOR Fig.3 On-state power dissipation – sine wave Fig.4 Stored Charge Fig.5 Gate characteristics Fig.6 Surge (non-repetitive) on-state current vs time (with 50%VRRM at Tcase 125° C) 6/9 www.dynexsemi.com DCR1375SBA28 SEMICONDUCTOR Fig.7 Maximum (limit) transient thermal impedance – junction to case (° C/kW) 7/9 www.dynexsemi.com DCR1375SBA28 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Device DCR1374SBA18 DCR1375SBA28 DCR1376SBA36 DCR2690L22 DCR2480L28 DCR2040L42 DCR1850L52 DCR1570L65 DCR1300L85 Maximum Minimum Thickness Thickness (mm) (mm) 34.515 33.965 34.59 34.04 34.82 34.27 34.515 33.965 34.59 34.04 34.82 34.27 34.94 34.39 35.2 34.65 35.56 35.01 Ø98.9 MAX. Ø62.85 NOM. Ø1.5 CATHODE GATE ANODE Ø62.85 NOM. FOR PACKAGE HEIGHT SEE TABLE Nominal weight: 1100g Clamping force: 40kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: L Fig.15 Package outline 8/9 www.dynexsemi.com DCR1375SBA28 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9 www.dynexsemi.com