DYNEX DCR1375SBA27

DCR1375SBA28
Phase Control Thyristor
DS4654-5.1 MAY 2005 (LN23955)
Replaces July 2001 version DS4654-5.0
FEATURES
•
Double Side Cooling
•
High Surge Capability
•
Low Turn-on Losses
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
2800V
2004A
35000A
1000V/µs
500A/µs
APPLICATIONS
•
High Voltage Power Converters
•
DC Motor Control
•
High Voltage Power Supplies
VOLTAGE RATINGS
Part and
Ordering
Number
DCR1375SBA28
DCR1375SBA27
DCR1375SBA26
DCR1375SBA25
DCR1375SBA24
Repetitive Peak
Voltages
VDRM and VRRM
V
2800
2700
2600
2500
2400
Conditions
Tvj = 0° C to 125° C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
Outline type code: L
(See Package Details for further information)
Fig. 1 Package outline
For example:
DCR1375SBA28
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR1375SBA28
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60° C unless stated otherwise
Parameter
Symbol
Test Conditions
Max.
Units
2004
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3148
A
Continuous (direct) on-state current
-
2846
A
1491
A
IT
Half wave resistive load
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2342
A
Continuous (direct) on-state current
-
2009
A
Test Conditions
Max.
Units
1575
A
IT
Half wave resistive load
Tcase = 80° C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV
IT(RMS)
IT
Mean on-state current
Half wave resistive load
RMS value
-
2475
A
Continuous (direct) on-state current
-
2200
A
1150
A
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1805
A
Continuous (direct) on-state current
-
1520
A
IT
Half wave resistive load
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DCR1375SBA28
SEMICONDUCTOR
SURGE RATINGS
Parameter
Symbol
ITSM
2
It
ITSM
2
It
Surge (non-repetitive) on-state current
2
I t for fusing
Surge ( non-repetitive) on-state current
2
I t for fusing
Test Conditions
Max.
Units
10ms half sine, Tcase = 125° C
28
kA
VR = 50%VRRM - ¼ Sine
3.92×10
6
35
10ms half sine, Tcase = 125° C
VR = 0
6.125×10
2
As
kA
6
2
As
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Test Conditions
Min.
Max.
Units
Double side cooled
DC
-
0.013
° C/W
Single side cooled
Anode DC
-
0.021
° C/W
Cathode DC
-
0.034
° C/W
Clamping force 40.0kN
Double side
-
0.003
° C/W
(with mounting compound)
Single side
-
0.006
° C/W
On-state (conducting)
-
135
°C
Reverse (blocking)
-
125
°C
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
36
44
kN
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DCR1375SBA28
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125° C
-
150
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125° C, gate open
-
1000
V/µs
dI/dt
Rate of rise of on-state current
From 80% VDRM
Repetitive 50Hz
-
250
A/µs
Gate source 20V, 20Ω,
Non-repetitive
-
500
A/µs
tr < 1.0µs, Tj = 125° C
VT(TO)
rT
tgd
Threshold voltage – Low level
At Tvj = 125° C
-
1.02
V
On-state slope resistance – Low level
At Tvj = 125° C
-
0.259
mΩ
VD = 67% VDRM, gate source 30V, 15Ω
-
2
µs
Delay time
tr = 0.5µs, Tj = 25° C
tq
Turn-off time
IT = 800A, tp = 1 ms, Tj = 125° C, VR = 50V,
dI/dt = 20A/µs, VDR = 67% VDRM
400
µs
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 800A, Tj = 125° C, dI/dt – 1A/µs,
-
1500
µC
IL
Latching current
Tj = 25° C, VD = 5V
-
500
mA
IH
Holding current
Tj = 25° C, RG-K = ∞
-
260
mA
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DCR1375SBA28
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
3
V
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25° C
VGD
Gate non-trigger voltage
At VDRM, Tcase = 125° C
0.25
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25° C
350
mA
30
V
0.25
V
5
V
Anode positive with respect to
cathode
Anode negative with respect to
cathode
VFGM
Peak forward gate voltage
VFGN
Peak forward gate voltage
VRGM
Peak forward gate voltage
IFGM
Peak forward gate current
Anode positive with respect to
cathode
10
A
PGM
Peak gate power
See table fig. 5
150
W
PG(AV)
Mean gate power
10
W
-
-
CURVES
Fig.2 Maximum (limit) on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 1.149986
B = -0.09990939
-5
C = 7.993598×10
D = 0.02290949
these values are valid for Tj = 125° C for IT 500A to 6500A
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DCR1375SBA28
SEMICONDUCTOR
Fig.3 On-state power dissipation – sine wave
Fig.4 Stored Charge
Fig.5 Gate characteristics
Fig.6 Surge (non-repetitive) on-state current vs time
(with 50%VRRM at Tcase 125° C)
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DCR1375SBA28
SEMICONDUCTOR
Fig.7 Maximum (limit) transient thermal impedance –
junction to case (° C/kW)
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DCR1375SBA28
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
20° OFFSET (NOM.)
TO GATE TUBE
Device
DCR1374SBA18
DCR1375SBA28
DCR1376SBA36
DCR2690L22
DCR2480L28
DCR2040L42
DCR1850L52
DCR1570L65
DCR1300L85
Maximum Minimum
Thickness Thickness
(mm)
(mm)
34.515
33.965
34.59
34.04
34.82
34.27
34.515
33.965
34.59
34.04
34.82
34.27
34.94
34.39
35.2
34.65
35.56
35.01
Ø98.9 MAX.
Ø62.85 NOM.
Ø1.5
CATHODE
GATE
ANODE
Ø62.85 NOM.
FOR PACKAGE HEIGHT
SEE TABLE
Nominal weight: 1100g
Clamping force: 40kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: L
Fig.15 Package outline
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DCR1375SBA28
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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