DYNEX DCR2560A75

DCR2560A85
Phase Control Thyristor
Preliminary Information
DS5932-1.1 January 2009 (LN 26574)
KEY PARAMETERS
FEATURES
Double Side Cooling
High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
8500V
2560A
32500A
1500V/µs
200A/µs
* Higher dV/dt selections available
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
DCR2560A85*
DCR2560A80
DCR2560A75
DCR2560A70
Repetitive Peak
Voltages
VDRM and VRRM
V
8500
8000
7500
7000
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 300mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
o
o
*8200V @ -40 C, 8500V @ 0 C
Outline type code: A
(See Package Details for further information)
ORDERING INFORMATION
Fig. 1 Package outline
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR2560A85
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR2560A85
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Parameter
Symbol
Test Conditions
Max.
Units
2555
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4013
A
Continuous (direct) on-state current
-
3710
A
IT
Half wave resistive load
SURGE RATINGS
Parameter
Symbol
ITSM
2
It
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
32.5
kA
VR = 0
5.28
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Test Conditions
Double side cooled
DC
-
0.00603
°C/W
Single side cooled
Anode DC
-
0.01024
°C/W
Cathode DC
-
0.01467
°C/W
Clamping force 83.0kN
Double side
-
0.001
°C/W
(with mounting compound)
Single side
-
0.002
°C/W
On-state (conducting)
-
135
°C
Reverse (blocking)
-
125
°C
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
74.0
91.0
kN
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DCR2560A85
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
300
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
100
A/µs
Gate source 30V, 10,
Non-repetitive
-
200
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
500 to 1600A at Tcase = 125°C
-
0.9
V
Threshold voltage – High level
1600 to 4000A at Tcase = 125°C
-
1.18
V
On-state slope resistance – Low level
500A to 1600A at Tcase = 125°C
-
0.65
m
On-state slope resistance – High level
1600A to 4000A at Tcase = 125°C
-
0.46
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
1000
µs
5150
7950
µC
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
IT = 3000A, Tj = 125°C,
VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 3000A, Tj = 125°C, dI/dt – 1A/µs,
VRpeak ~5100V, VR ~ 3400V
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR2560A85
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At VDRM, Tcase = 125°C
0.3
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
400
mA
IGD
Gate non-trigger current
VDRM = 5V, Tcase = 25°C
20
mA
CURVES
Instantaneous on-state current I T - (A)
7000
6000
5000
4000
3000
2000
min 125°C
max 125°C
min 25°C
max 25°C
1000
0
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = -0.224010
B = 0.1725829
C = 0.000292
D = 0.01039
these values are valid for Tj = 125°C for IT 500A to 4200A
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DCR2560A85
SEMICONDUCTOR
130
16
180
120
90
60
30
120
( oC )
case
12
Maximum case temperature, T
Mean power dissipation - (kW)
14
10
8
6
180
120
90
60
30
4
2
110
100
90
80
70
60
50
40
30
20
10
0
0
1000
2000
3000
Mean on-state current, IT(AV) - (A)
0
4000
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
16
180
120
90
60
30
100
75
50
25
14
Mean power dissipation - (kW)
Maximum heatsink temperature, T Heatsink - ( ° C)
125
12
10
8
6
d.c.
180
120
90
60
30
4
2
0
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
5000
Fig.6 On-state power dissipation – rectangular wave
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DCR2560A85
SEMICONDUCTOR
125
d.c.
180
120
90
60
30
100
Maximum heatsink temperature T heatsink -(o C)
Maximum permissible case temperature , T case -(° C)
125
75
50
25
d.c.
180
120
90
60
30
100
75
50
25
0
0
0
1000
2000
3000
4000
5000
6000
0
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Transient Thermal Impedance - Zth (°C/kW)
Double side cooled
14
Anode side cooled
Anode side cooled
Cathode side cooled
Cathode side cooled
12
Ri (°C/kW)
Ti (s)
Ri (°C/kW)
Ti (s)
Ri (°C/kW)
Ti (s)
1
3.01541
2
3
4
1.048955 0.983519 0.983519
0.703874 1.904794
0.059
0.059
3.156003 4.092806 1.556555 1.623962
2.69023
13.79162
0.059
0.205916
7.077369 3.483481 1.745839 2.634274
6.648601 8.436484 1.762119
Z th [ Ri (1 exp(T / Ti )]
i 4
10
6000
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
Double side cooled
16
0.08069
i 1
8
Rth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
6
Double side cooling
Zth (z)
°
sine.
rect.
180
0.44
0.31
120
0.49
0.43
90
0.55
0.49
60
0.60
0.55
30
0.64
0.61
15
0.66
0.64
4
2
0
0.001
1000 2000 3000 4000 5000
Mean on-state current, IT(AV) - (A)
0.01
0.1
1
10
Anode Side Cooling
Zth (z)
° sine.
rect.
180
0.42
0.30
120
0.47
0.41
90
0.52
0.46
60
0.57
0.52
30
0.61
0.58
15
0.62
0.61
Cathode Sided Cooling
Zth (z)
° sine.
rect.
180 0.42
0.30
120 0.47
0.41
90
0.52
0.46
60
0.57
0.52
30
0.60
0.58
15
0.62
0.60
100
Time (s)
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DCR2560A85
SEMICONDUCTOR
100
10
35
15
10
6
40
4
2
60
Conditions:
Tcase= 125°C
VR = 0
half-sine wave
20
5
2
0
0
1
10
1
100
0
100
10
Pulse width, tP - (ms)
Number of cycles
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
800
41000
QSmax = 7950.1*(di/dt)0.4626
700
- (A)
36000
IRRmax = 63.604*(di/dt)0.7474
600
Reverse recovery current, I
RR
31000
Stored Charge, Qs - (uC)
8
ITSM
2
20
I2t
80
I t (MA s)
Surge current, ITSM- (kA)
25
Surge current, ITSM - (kA)
Conditions:
Tcase = 125°C
VR =0
Pulse width = 10ms
30
26000
21000
QSmin = 5146.8*(di/dt)0.5188
16000
Conditions :
O
Tj = 125 C, VRpeak ~ 5100V
VRM ~ 3400V
snubber as appropriate to control
reverse voltage
11000
6000
500
400
IRRmin = 51.42*(di/dt)0.7839
300
Conditions:
O
200
Tj = 125 C, VRpeak ~ 5100V
VRM ~ 3400V
snubber as appropriate to
control reverse volts
100
1000
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
0
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
Fig.13 Reverse recovery current
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DCR2560A85
SEMICONDUCTOR
10
9
Pulse
Width us
100
200
500
1000
10000
Gate trigger voltage, VGT - (V)
8
7
Pulse Power PGM (Watts)
Frequency Hz
50
100
150
150
150
150
150
150
150
100
20
-
400
150
125
100
25
-
Upper Limit
6
5
Preferred gate drive area
4
3
2
o
1
Tj = -40oC
Tj = 25oC
Lower Limit
Tj = 125 C
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR2560A85
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: A
Fig.16 Package outline
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DCR2560A85
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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