DYNEX DCR3990A52

DCR3990A52
Phase Control Thyristor
Preliminary Information
DS5940-1.0 March 2009 (LN 26623)
KEY PARAMETERS
FEATURES
Double Side Cooling
High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
5200V
3990A
53400A
2000V/µs
400A/µs
* Higher dV/dt selections available
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
DCR3990A52*
DCR3990A50
DCR3990A45
Repetitive Peak
Voltages
VDRM and VRRM
V
5200
5000
4500
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 300mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
o
o
*5000V @ -40 C, 5200V @ 0 C
Outline type code: A
(See Package Details for further information)
ORDERING INFORMATION
Fig. 1 Package outline
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR3990A52
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR3990A52
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Parameter
Symbol
Test Conditions
Max.
Units
3990
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
6270
A
Continuous (direct) on-state current
-
5640
A
IT
Half wave resistive load
SURGE RATINGS
Parameter
Symbol
ITSM
2
It
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
53.4
kA
VR = 0
14.25
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Test Conditions
Double side cooled
DC
-
0.00603
°C/W
Single side cooled
Anode DC
-
0.01024
°C/W
Cathode DC
-
0.01467
°C/W
Clamping force 83.0kN
Double side
-
0.001
°C/W
(with mounting compound)
Single side
-
0.002
°C/W
On-state (conducting)
-
135
°C
Reverse (blocking)
-
125
°C
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
74.0
91.0
kN
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DCR3990A52
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
300
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
2000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
400
A/µs
Gate source 30V, 10,
Non-repetitive
-
1000
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
1000 to 2600A at Tcase = 125°C
-
0.85
V
Threshold voltage – High level
2600 to 9000A at Tcase = 125°C
-
0.99
V
On-state slope resistance – Low level
1000 to 2600A at Tcase = 125°C
-
0.2115
m
On-state slope resistance – High level
2600 to 9000A at Tcase = 125°C
-
0.1578
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
750
µs
4030
5420
µC
49
59
A
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C,
VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 3000A, Tj = 125°C, dI/dt – 1A/µs,
VRpeak ~3100V, VR ~ 2100V
IRR
Reverse recovery current
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR3990A52
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
300
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
10
mA
CURVES
9000
min @ 125ºC
max @ 125ºC
max @ 25ºC
min @ 25ºC
Instantaneous on-staate current, I T - (A)
8000
7000
6000
5000
4000
3000
2000
1000
0
0
0.5
1
1.5
2
2.5
Instantaneous on-state voltage , VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.061592
B = 0.115333
C = 0.000119
D = 0.002394
these values are valid for Tj = 125°C for IT 250A to 9000A
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DCR3990A52
SEMICONDUCTOR
130
12
180
120
90
60
30
( oC )
case
8
Maximum case temperature, T
Mean power dissipation - (kW)
10
180
120
90
60
30
120
6
4
2
110
100
90
80
70
60
50
40
30
20
10
0
0
0
0
500 1000 1500 2000 2500 3000 3500 4000
Mean on-state current, IT(AV) - (A)
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
180
120
90
60
30
100
75
50
25
16
d.c.
180
120
90
60
30
14
Mean power dissipation - (kW)
Maximum heatsink temperature, T Heatsink - ( ° C)
125
12
10
8
6
4
2
0
0
0
0
1000
2000
3000
4000
500 1000 1500 2000 2500 3000 3500 4000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
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DCR3990A52
SEMICONDUCTOR
125
Maximum heatsink temperature T heatsink -(o C)
Maximum permissible case temperature , T case -(° C)
125
100
75
50
d.c.
180
120
90
60
30
25
100
75
50
d.c.
180
120
90
60
30
25
0
0
0
500 1000 1500 2000 2500 3000 3500 4000
0
500 1000 1500 2000 2500 3000 3500 4000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Double side cooled
16
Transient Thermal Impedance - Zth (°C/kW)
Double side cooled
14
Anode side cooled
Anode side cooled
Cathode side cooled
Cathode side cooled
12
Ri (°C/kW)
Ti (s)
Ri (°C/kW)
Ti (s)
Ri (°C/kW)
Ti (s)
1
3.01541
2
3
4
1.048955 0.983519 0.983519
0.703874 1.904794
0.059
0.059
3.156003 4.092806 1.556555 1.623962
2.69023
13.79162
0.059
0.205916
7.077369 3.483481 1.745839 2.634274
6.648601 8.436484 1.762119
Z th [ Ri (1 exp(T / Ti )]
i 4
10
0.08069
i 1
8
Rth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
6
Double side cooling
Zth (z)
°
sine.
rect.
180
0.44
0.31
120
0.49
0.43
90
0.55
0.49
60
0.60
0.55
30
0.64
0.61
15
0.66
0.64
4
2
0
0.001
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
0.01
0.1
1
10
Anode Side Cooling
Zth (z)
° sine.
rect.
180
0.42
0.30
120
0.47
0.41
90
0.52
0.46
60
0.57
0.52
30
0.61
0.58
15
0.62
0.61
Cathode Sided Cooling
Zth (z)
° sine.
rect.
180 0.42
0.30
120 0.47
0.41
90
0.52
0.46
60
0.57
0.52
30
0.60
0.58
15
0.62
0.60
100
Time (s)
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DCR3990A52
SEMICONDUCTOR
10
140
28
130
26
120
24
110
22
100
20
ITSM
90
18
80
16
I2t
70
14
60
12
50
10
Conditions:
Tcase= 125°C
VR = 0
half-sine wave
40
30
20
10
8
6
4
2
0
1
1
10
1
100
I2t (MA2s)
Conditions:
Tcase = 125°C
VR =0
Pulse width = 10ms
Surge current, ITSM - (kA)
Surge current, ITSM- (kA)
100
0
100
10
Pulse width, tP - (ms)
Number of cycles
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
600
25000
Qsmax = 5413.5*(di/dt)0.4762
IRRmax = 58.296*(di/dt)0.7559
500
Reverse recovery current, IRR - (A)
Stored Charge, Qs - (uC)
20000
15000
Qsmin = 4030.8*(di/dt)0.5002
10000
Conditions:
Tj= 125ºC
VRpeak ~ 3100V
VRM ~ 2100V
snubber as appropriate to
control reverse voltage
5000
400
300
IRRmin = 49.567*(di/dt)0.7701
200
Conditions :
Tj = 125ºC
VRpeak ~ 3100V
VRM ~ 2100V
snubber as appropriate to
control reverse voltage
100
0
0
0
5
10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
0
5
10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
Fig.13 Reverse recovery current
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DCR3990A52
SEMICONDUCTOR
10
9
Pulse
Width us
100
200
500
1000
10000
Gate trigger voltage, VGT - (V)
8
7
Pulse Power PGM (Watts)
Frequency Hz
50
100
150
150
150
150
150
150
150
100
20
-
400
150
125
100
25
-
Upper Limit
6
5
Preferred gate drive area
4
3
2
o
1
Tj = -40oC
Tj = 25oC
Lower Limit
Tj = 125 C
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR3990A52
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Device
22CT93A
28CT93A
42CT93A
DCR3990A52
DCR3220A65
DCR2560A85
Maximum Minimum
Thickness Thickness
(mm)
(mm)
35.165
34.555
35.24
34.63
35.47
34.86
35.61
35
35.85
35.24
36.19
35.58
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: A
Fig.16 Package outline
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DCR3990A52
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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