DYNEX DIM400DDM12-A000

DIM400DDM12-A000
Dual Switch IGBT Module
DS5532-3.1 January 2009(LN26558)
FEATURES
10µs Short Circuit Withstand
Non Punch Through Silicon
Lead Free construction
Isolated MMC Base with AlN Substrates
High Thermal Cycling Capability
KEY PARAMETERS
V CES
V CE(sat) *
(typ)
IC
(max)
I C(PK)
(max)
1200V
2.2 V
400A
800A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V
to 6500V and currents up to 2400A.
Fig. 1 Circuit configuration
The DIM400DDM12-A000 is a dual switch 1200V, nchannel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10us
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400DDM12-A000
Outline type code: D
(See Fig. 11 for further information)
Fig. 2 Package
Note: When ordering, please use the complete part
number
1/8
DIM400DDM12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Units
1200
V
±20
V
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Continuous collector
current
Tcase =85 °C
400
A
IC(PK)
Peak collector current
1ms, Tcase=115 °C
800
A
Pmax
Max.transistor power
dissipation
Tcase =25 °C, Tj =150 °C
3470
kW
25
KA s
2
2
It
Visol
QPD
VGE =0V
Max.
2
Diode I t value
VR = 0V, tp =10ms, Tj = 125°C
Isolation voltage-per
module
Partial discharge-per
module
Commoned terminals to base plate. AC RMS,
1 min,50Hz
2500
V
IEC1287.V1 =1300V, V2 =1000V, 50Hz RMS
10
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index)
175
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
Parameter
Test Conditions
Min
Max
Units
36
°C/kW
80
°C/kW
8
°C/kW
Thermal resistance -transistor (per
switch)
Thermal resistance -diode (per
switch)
Thermal resistance -case to
heatsink
(per module)
Continuous dissipation junction to case
Continuous dissipation junction to case
Junction temperature
Transistor
150
°C
Diode
125
°C
125
°C
5
Nm
2
Nm
10
Nm
Mounting torque 5Nm
(with mounting grease)
Storage temperature range
Screw torque
Mounting M6
Electrical connections –
M4
Electrical connections –
M8
2/8:
Typ.
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DDM12-A000
ELECTRICAL CHARACTERISTICS
T case = 25°C unless stated otherwise.
Symbol
Parameter
Collector cut-off current
ICES
Test Conditions
Min
Typ
Max
Units
VGE =0V,VCE =VCES
0.5
mA
VGE =0V,VCE =VCES ,Tcase =125 °C
12
mA
2
uA
5.5
6.5
V
IGES
Gate leakage current
VGE = ±20V,VCE =0V
VGE(TH)
Gate threshold voltage
IC =20mA,VGE =VCE
Collector-emitter saturation
voltage
VGE =15V,IC =400A
2.2
2.8
V
VGE =15V,IC =400A,Tcase =125 °C
2.6
3.2
V
VCE(sat)
†
4.5
IF
Diode forward current
DC
400
A
IFM
Diode maximum forward
current
tp =1ms
800
A
Diode forward voltage
IF =400A
2.1
2.4
V
IF =400A,Tcase =125 °C
2.1
2.4
V
20
VF
†
Cies
Input capacitance
VCE =25V,VGE =0V,f =1MHz
LM
Module inductance
--
RINT
Internal transistor resistance
SCData
Short circuit current, I SC
Tj = 125º C, VCC = 900V
tp Vge *
VCE(max) = VCES – L x di/dt
I1
I2
nF
20
nH
0.27
µ
2750
A
2250
A
Note:
†
Measured at the power busbars and not the auxiliary terminals
*
L is the circuit inductance + L M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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3/8
DIM400DDM12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Test Conditions
Min
Typ.
Max
Units
IC =400A
710
ns
Fall time
VGE =±15V
70
ns
EOFF
Turn-off energy loss
VCE =600V
60
mJ
td(on)
Turn-on delay time
RG(ON) =RG(OFF)=3.3
190
ns
tr
Rise time
100
ns
Qg
Gate charge
4
uC
EON
Turn-on energy loss
40
mJ
IF =400A,VCE =600V,
55
uC
dIF/dt =4700A/us
300
A
17
mJ
Qrr
Irr
Erec
Diode reverse recovery
charge
Diode reverse recovery
current
Diode reverse recovery
energy
L ~100nH
Tcase = 125°C unless stated otherwise
Parameter
Symbol
td(off)
Turn-off delay time
tf
Test Conditions
Min
Typ.
Max
Units
IC =400A
890
ns
Fall time
VGE =±15V
100
ns
EOFF
Turn-off energy loss
VCE =600V
60
mJ
td(on)
Turn-on delay time
RG(ON) =RG(OFF)=3.3
440
ns
tr
Rise time
125
ns
EON
Turn-on energy loss
L ~100nH
60
mJ
IF =400A,VCE =600V,
85
uC
dIF/dt =4000A/us
320
A
32
mJ
Qrr
Irr
Erec
4/8:
Diode reverse recovery
charge
Diode reverse recovery
current
Diode reverse recovery
energy
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DDM12-A000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig.5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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5/8
DIM400DDM12-A000
6/8:
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DDM12-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
130 ± 0.5
114 ±0.1
4 x M8
29.2 ±0.5
57 ±0.25
screwing depth
max 16
5.25 ±0.3
11.5 ±0.2
6 x M4
16 ±0.2
40 ±0.2
53 ±0.2
14 ±0.2
35 ±0.2
30 ±0.2
140 ±0.5
124 ±0.25
20 ±0.1
57 ±0.25
28 ±0.5
6 x O7
18 ±0.2
screwing depth
max 8
44 ±0.2
57 ±0.2
1(E)
2(C)
5(E)
12(C)
6(G)
11(G)
5 ±0.2
38
+1.5
-0.0
55.2 ± 0.3
11.85 ±0.2
10(E)
7(C)
3(C)
4(E)
Nominal weight: 1050g
Module outline type code: D
Figure 11 Outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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7/8
DIM400DDM12-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in
device voltages and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general
use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Fax: +44(0)1522 500550
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Tel: +44(0)1522 500500
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as
follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification.
No
actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
8/8:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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