DIM400DDM12-A000 Dual Switch IGBT Module DS5532-3.1 January 2009(LN26558) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 1200V 2.2 V 400A 800A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. Fig. 1 Circuit configuration The DIM400DDM12-A000 is a dual switch 1200V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM400DDM12-A000 Outline type code: D (See Fig. 11 for further information) Fig. 2 Package Note: When ordering, please use the complete part number 1/8 DIM400DDM12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Units 1200 V ±20 V VCES Collector-emitter voltage VGES Gate-emitter voltage IC Continuous collector current Tcase =85 °C 400 A IC(PK) Peak collector current 1ms, Tcase=115 °C 800 A Pmax Max.transistor power dissipation Tcase =25 °C, Tj =150 °C 3470 kW 25 KA s 2 2 It Visol QPD VGE =0V Max. 2 Diode I t value VR = 0V, tp =10ms, Tj = 125°C Isolation voltage-per module Partial discharge-per module Commoned terminals to base plate. AC RMS, 1 min,50Hz 2500 V IEC1287.V1 =1300V, V2 =1000V, 50Hz RMS 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 20mm Clearance: 10mm CTI (Critical Tracking Index) 175 Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Tstg Parameter Test Conditions Min Max Units 36 °C/kW 80 °C/kW 8 °C/kW Thermal resistance -transistor (per switch) Thermal resistance -diode (per switch) Thermal resistance -case to heatsink (per module) Continuous dissipation junction to case Continuous dissipation junction to case Junction temperature Transistor 150 °C Diode 125 °C 125 °C 5 Nm 2 Nm 10 Nm Mounting torque 5Nm (with mounting grease) Storage temperature range Screw torque Mounting M6 Electrical connections – M4 Electrical connections – M8 2/8: Typ. This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400DDM12-A000 ELECTRICAL CHARACTERISTICS T case = 25°C unless stated otherwise. Symbol Parameter Collector cut-off current ICES Test Conditions Min Typ Max Units VGE =0V,VCE =VCES 0.5 mA VGE =0V,VCE =VCES ,Tcase =125 °C 12 mA 2 uA 5.5 6.5 V IGES Gate leakage current VGE = ±20V,VCE =0V VGE(TH) Gate threshold voltage IC =20mA,VGE =VCE Collector-emitter saturation voltage VGE =15V,IC =400A 2.2 2.8 V VGE =15V,IC =400A,Tcase =125 °C 2.6 3.2 V VCE(sat) † 4.5 IF Diode forward current DC 400 A IFM Diode maximum forward current tp =1ms 800 A Diode forward voltage IF =400A 2.1 2.4 V IF =400A,Tcase =125 °C 2.1 2.4 V 20 VF † Cies Input capacitance VCE =25V,VGE =0V,f =1MHz LM Module inductance -- RINT Internal transistor resistance SCData Short circuit current, I SC Tj = 125º C, VCC = 900V tp Vge * VCE(max) = VCES – L x di/dt I1 I2 nF 20 nH 0.27 µ 2750 A 2250 A Note: † Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + L M Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3/8 DIM400DDM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol Parameter td(off) Turn-off delay time tf Test Conditions Min Typ. Max Units IC =400A 710 ns Fall time VGE =±15V 70 ns EOFF Turn-off energy loss VCE =600V 60 mJ td(on) Turn-on delay time RG(ON) =RG(OFF)=3.3 190 ns tr Rise time 100 ns Qg Gate charge 4 uC EON Turn-on energy loss 40 mJ IF =400A,VCE =600V, 55 uC dIF/dt =4700A/us 300 A 17 mJ Qrr Irr Erec Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy L ~100nH Tcase = 125°C unless stated otherwise Parameter Symbol td(off) Turn-off delay time tf Test Conditions Min Typ. Max Units IC =400A 890 ns Fall time VGE =±15V 100 ns EOFF Turn-off energy loss VCE =600V 60 mJ td(on) Turn-on delay time RG(ON) =RG(OFF)=3.3 440 ns tr Rise time 125 ns EON Turn-on energy loss L ~100nH 60 mJ IF =400A,VCE =600V, 85 uC dIF/dt =4000A/us 320 A 32 mJ Qrr Irr Erec 4/8: Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400DDM12-A000 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig.5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5/8 DIM400DDM12-A000 6/8: Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400DDM12-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 130 ± 0.5 114 ±0.1 4 x M8 29.2 ±0.5 57 ±0.25 screwing depth max 16 5.25 ±0.3 11.5 ±0.2 6 x M4 16 ±0.2 40 ±0.2 53 ±0.2 14 ±0.2 35 ±0.2 30 ±0.2 140 ±0.5 124 ±0.25 20 ±0.1 57 ±0.25 28 ±0.5 6 x O7 18 ±0.2 screwing depth max 8 44 ±0.2 57 ±0.2 1(E) 2(C) 5(E) 12(C) 6(G) 11(G) 5 ±0.2 38 +1.5 -0.0 55.2 ± 0.3 11.85 ±0.2 10(E) 7(C) 3(C) 4(E) Nominal weight: 1050g Module outline type code: D Figure 11 Outline drawing Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7/8 DIM400DDM12-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500550 Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Tel: +44(0)1522 500500 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com