Si1902DL Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET® Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 M a r k inCode g C ode Marking P PAA XX Y YYY S1 Lot L o Traceability tT and Date Code Part # Code Top View Ordering Information: Si1902DL-T1 (with Tape and Reel) Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 85 °C ID IS Continuous Source Current (Diode Conduction)a TA = 25 °C Maximum Power Dissipationa TA = 85 °C Operating Junction and Storage Temperature Range PD V 0.70 0.66 0.50 IDM Pulsed Drain Current 0.48 A 1.0 0.25 0.23 0.30 0.27 0.16 0.14 TJ, Tstg Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 5 sec Steady State Steady State RthJA RthJF Typical Maximum 360 415 400 460 300 350 Unit °C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71080 S-51415–Rev. H, 03-Apr-06 www.vishay.com 1 Si1902DL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min 0.6 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 µA 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA IDSS VDS = 16 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 16 VGS = 0 V, TJ = 85°C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Gate Threshold Voltage Forward Transconductancea Diode Forward Voltagea VDS ≥ 5 V, VGS = 4.5 V µA 1.0 A VGS = 4.5 V, ID = 0.66 A 0.320 0.385 VGS = 2.5 V, ID = 0.40 A 0.560 0.630 gfs VDS = 10 V, ID = 0.66 A 1.5 VSD IS = 0.23 A, VGS = 0 V 0.8 1.2 0.8 1.2 VDS = 10 V, VGS = 4.5 V, ID = 0.66 A 0.06 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.30 Turn-On Delay Time td(on) 10 Rise Time VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, RG = 6 Ω tr Turn-Off DelayTime td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 0.23 A, di/dt = 100 A/µs nC 20 16 30 10 20 10 20 20 40 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 1.0 VGS = 5 thru 2.5 V 0.8 I D – Drain Current (A) I D – Drain Current (A) 0.8 2V 0.6 0.4 0.6 0.4 TC = 125 °C 0.2 0.2 25 °C 1.5 V - 55 °C 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 3.0 0 .0 0.0 0 .5 1.0 1.5 2.0 2.5 VGS – Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71080 S-51415–Rev. H, 03-Apr-06 Si1902DL Vishay Siliconix 1.0 100 0.8 80 C – Capacitance (pF) r DS(on) – On-Resistance (Ω) TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted VGS = 2.5 V 0.6 0.4 VGS = 4.5 V Ciss 60 40 Coss 20 0.2 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 0 1.0 4 8 On-Resistance vs. Drain Current 20 Capacitance VGS = 4.5 V ID = 0.66 A VDS = 10 V ID = 0.66 A 1.4 4 r DS(on) – On-Resistance (Normalized) VGS – Gate-to-Source Voltage (V) 16 1.6 5 3 2 1.2 1.0 0.8 1 0 0.0 0.2 0.4 0.6 0.6 - 50 0.8 - 25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 1.0 r DS(on) – On-Resistance (Ω) I S – Source Current (A) 1 TJ = 150 °C TJ = 25 °C 0.1 0.0 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 0.8 ID = 0.66 A 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Surge-Drain Diode Forward Voltage Document Number: 71080 S-51415–Rev. H, 03-Apr-06 1.2 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.2 5 4 ID = 250 μA - 0.0 Power (W) V GS(th) Variance (V) 0.1 - 0.1 - 0.2 3 2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 TJ – Temperature (°C) 125 150 0 10-3 Threshold Voltage 10-2 10-1 1 Time (sec) 10 100 600 Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 400 °C/W 3 . TJ M – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 1 0 -2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71080 S-51415–Rev. H, 03-Apr-06 Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71080. Document Number: 71080 S-51415–Rev. H, 03-Apr-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1