New Product TN0200K Vishay Siliconix N-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.4 at VGS = 4.5 V 0.73 0.5 at VGS = 2.5 V 0.65 20 • TrenchFET® Power MOSFET • ESD Protected: 4000 V RoHS COMPLIANT APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers • Battery Operated Systems, DC/DC Converters • Solid-State Relays • Load/Power Switching-Cell Phones, Pagers TO-236 (SOT-23) G D Marking Code: K2ywl 1 3 S D 100 Ω K2 = Part Number Code for TN0200K G y = Year Code w = Week Code l = Lot Traceability 2 Top View Ordering Information: TN0200K-T1-E3 (Lead (Pb)-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 70 °C a Pulsed Drain Current Continuous Source Current (Diode Conduction)b TA = 25 °C Power Dissipationb TA = 70 °C Operating Junction and Storage Temperature Range ID V 0.73 0.58 IDM 4 IS 0.3 PD Unit 0.35 0.22 A W TJ, Tstg - 55 to 150 Symbol Limit Unit RthJA 357 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t ≤ 10 sec. Document Number: 72678 S-71198–Rev. B, 18-Jun-07 www.vishay.com 1 New Product TN0200K Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 10 µA 20 VGS(th) VDS = VGS, ID = 50 µA 0.45 0.6 1.0 IGSS VDS = 0 V, VGS = ± 4.5 V ±5 VDS = 20 V, VGS = 0 V 0.1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea rDS(on) Forward Transconductancea Diode Forward TJ = 55 °C Voltagea V µA 10 VDS ≥ 5 V, VGS = 4.5 V 2.5 VDS ≥ 5 V, VGS = 2.5 V 1.5 A VGS = 4.5 V, ID = 0.6 A 0.2 0.4 VGS = 2.5 V, ID = 0.6 A 0.25 0.5 Ω gfs VDS = 5 V, ID = 0.6 A 2.2 VSD IS = 0.3 A, VGS = 0 V 0.8 1.2 1400 2000 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 10 V, VGS = 4.5 V ID = 0.6 A 300 VDD = 10 V, RL = 16 Ω ID ≅ 0.6 A, VGEN = 4.5 V Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall TIme Ω 105 td(on) Turn-On Delay Time pC 190 17 25 20 30 55 85 30 45 ns Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 4.0 TJ = - 55 °C VGS = 5 thru 2.5 V 3.2 I D – Drain Current (A) I D – Drain Current (A) 3 2V 2.4 1.6 1.5 V 25 °C 2 125 °C 1 0.8 1V 0.0 0.0 0.4 0.8 1.2 1.6 VDS – Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72678 S-71198–Rev. B, 18-Jun-07 New Product TN0200K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 200 C – Capacitance (pF) r DS(on) – On-Resistance (Ω) 175 0.8 0.6 0.4 VGS = 2.5 V VGS = 4.5 V 150 125 Ciss 100 75 Coss 50 0.2 Crss 25 0.0 0 0 1 2 3 4 5 6 7 0 4 ID – Drain Current (A) 8 20 Capacitance 5 1.7 VDS = 10 V ID = 0.6 A 4 1.5 rDS(on) – On-Resiistance (Normalized) V GS – Gate-to-Source Voltage (V) 16 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 3 2 1 0 0.0 VGS = 4.5 V ID = 0.6 A 1.3 1.1 0.9 0.3 0.6 0.9 1.2 0.7 - 50 1.5 - 25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 5 0.8 0.7 r DS(on) – On-Resistance (Ω) TJ = 150 °C 1 I S – Source Current (A) 12 0.1 TJ = 25 °C 0.01 0.6 0.5 ID = 0.6 A 0.4 0.3 0.2 0.1 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72678 S-71198–Rev. B, 18-Jun-07 1.4 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage www.vishay.com 3 New Product TN0200K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 100000 10000 1000 I GSS – Gate Current (µA) V GS(th) Variance (V) 0.1 ID = 50 µA - 0.0 - 0.1 - 0.2 100 TJ = 150 °C 10 1 0.1 TJ = 25 °C - 0.3 0.01 - 0.4 - 50 0.001 - 25 0 25 50 75 100 125 150 4 2 6 8 VGS – Gate-to-Source Voltage (V) 0 TJ – Temperature (°C) Threshold Voltage Gate Current vs. Gate-Source Voltage 10 5 IDM Limited *r DS(on) Limited 4 I D – Drain Current (A) 1 Power (W) 10 3 2 10 ms 0.1 0.01 1 1 ms ID(on) Limited 100 ms 1s 10 s dc TA = 25 °C Single Pulse BVDSS Limited 0 0.01 0.1 1 10 100 600 0.001 0.1 Time (sec) *VGS Single Pulse Power, Junction-to-Ambient 1 10 100 VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72678. www.vishay.com 4 Document Number: 72678 S-71198–Rev. B, 18-Jun-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1